Inphi Corporation

Infinera Corporation

Marvell Asia Pte., Ltd.

Luxnet Corporation

Other

Jds Uniphase Corporation

Radhakrishnan L Nagarajan

Masaki Kato

Fred A Kish, Jr

Charles H Joyner

David F Welch

Mark Missey

Vincent G Dominic

Todd Rope

Richard P Schneider

Liang Ding

Roberto Coccioli

Peng-Chih Li

Atul Mathur

Alan C Nilsson

Frank H Peters

Mark Patterson

Mehrdad Ziari

Ting-Kuang Chiang

Hari Shankar

Robert B Taylor

Matthew L Mitchell

Stephen G Grubb

Chao Xu

Xiaoguang He

Drew Daniel Perkins

Jonas Webjorn

Brian Taylor

Chris Togami

Frank Peters

Pi-Cheng Law

Peter Weindel Evans

Steve Aboagye

Gary D Sasser

Siddharth Sheth

Ding Liang

Xiaoguang Tu

Marco Sosa

Michael Francis Van Leeuwen

Andrew G Dentai

Jamal Riani

Scott W Corzine

Ilya Lyubomirsky

Pulkit Khandelwal

Vikrant Lal

Timothy Butrie

Nourhan Eid

Kenneth Ling Wong

Sung Choi

James Stewart

Yang Fu

Paul Yu

Kuang-Tsan Wu

Arash Farhoodfar

Jeffrey Thomas Rahn

Christopher Liou

Sheila K Hurtt

Fred A Kish

Kumaran David Siva

Jacco L Pleumeekers

Robert L Taylor

Randal A Salvatore

Damien Jean Henri Lambert

Sanjeev Murthy

Han Henry Sun

Robert J Lang

John Duncan McNicol

David Gerald Coult

David J Krause

Lenin Patra

Jie Tang

Jiaming Zhang

Joseph Edward Riska

Vivek Agrawal

Huan-Shang Tsai

Donald J Pavinski

Robert Grencavich

Harrison Ransom

Damien Lambert

Vinh D Nguyen

Donald J Pavinski, Jr

Donald C Hargreaves

Tonmoy Shankar Mukherjee

Ashok P Kanjamala

Tanya K Oleskevich

David Dawson

Vincent D Dominic

Gary Mak

Pei-Keng Fu

Hsu-Feng Chou

Steven Nguyen

Mark J Missey

Marco E Sosa

A co-packaged electro-optical module includes: a first planar light circuit (PLC) block; a silicon photonics chip electrically coupled to one or more chips; a splitter embedded in the first PLC block and to receive laser light from an optical fiber, to split the laser light into two portions, and to provide respective portions of the laser light to two planar waveguides; a planar surface of the silicon photonics chip to receive the portions of the laser light from the two planar waveguides in a direction perpendicular to the planar surface; modulators embedded in the silicon photonics chip and to modulate the portions of the laser light; a side edge of the silicon photonics chip extending perpendicular to the planar surface and to output the modulated portions of the laser light; and a second PLC block coupled to the side edge and to transmit the modulated portions of the laser light.

Co-packaging optical modules with surface and edge coupling

An integrated circuit includes a silicon photonics substrate and includes a transimpedance amplifier (TIA) chip and a driver chip arranged on the silicon photonics substrate. The silicon photonics substrate includes a silicon-based material, includes electrical connections, and includes silicon photonics components configured to receive and transmit optical signals. The TIA chip includes a silicon-germanium material that is different from the silicon-based material, is connected via the electrical connections to at least one of the silicon photonics components configured to receive an optical signal, and is configured to process a received optical signal and to output a processed signal to a digital signal processor. The driver chip includes CMOS material that is different from the silicon-germanium material and the silicon-based material, and is connected via the electrical connections to drive at least one of the silicon photonics components configured to generate an optical signal for transmission.

Integrated coherent optical transceiver

In an optical receiver apparatus for use with multiple optical modulation techniques, a photodiode circuit is configured to process optical signals corresponding to multiple optical modulation techniques, including a first modulation technique and a second modulation technique different from the first modulation technique. The photodiode circuit includes: a first photodiode configured to receive a first optical signal corresponding to a first modulation technique, and a multiple-input second photodiode coupled in series with the first photodiode. The multiple-input second photodiode is configured to receive i) a second optical signal corresponding to the first modulation technique, and ii) a third optical signal corresponding to the second modulation technique. An input of a transimpedance amplifier is coupled to the first photodiode and the second photodiode via a node between the first photodiode and the second photodiode.

Reconfigurable optical receiver for use with multiple modulation techniques

An optical communication system includes a co-packaged optical module and a heatsink mounted to the co-packaged optical module. The co-packaged optical module includes a processor disposed on a substrate and a plurality of light engines disposed at different locations around the processor on the substrate. The processor and the light engines generating different amounts of heat during operation. The heatsink includes a plurality of heat pipes non-uniformly distributed throughout the heatsink to remove the different amounts of heat generated at a location of the processor and respective locations of the different ones of the light engines.

Heatsink for co-packaged optical switch rack package

A laser device based on silicon photonics with in-cavity power monitor includes a gain chip, a reflector, and a photodiode. The gain chip is mounted on a silicon photonics substrate and is configured to emit light from an active region bounded between a frontend facet and a backend facet. The reflector is configured to reflect the light in a cavity formed between the reflector and the frontend facet through which a laser light is output. The photodiode is coupled to one or more waveguides in the cavity by a splitter disposed directly in an optical path between the reflector and a component positioned in the cavity. The photodiode is configured to measure power of light propagating through the cavity between the reflector and the component.

Power monitor for silicon-photonics-based laser

A hybrid electrical and optic system-on-chip (SOC) device configured for both electrical and optic communication includes a substrate, an electrical device configured for electrical communication arranged on the substrate, a photonics device configured for optic communication arranged on the substrate, and a self-test module arranged on the substrate. The self-test module is configured to receive a loop-back signal indicative of an optical signal output from the photonics device and calibrate the photonics device based on the loop-back signal.

Monolithically integrated system on chip for silicon photonics

An coherent transceiver includes a single silicon photonics substrate configured to integrate a laser diode chip flip-mounted and coupled with a wavelength tuning section to provide a laser output with tuned wavelengths which is split in X:Y ratio partly into a coherent receiver block as local-oscillator signals and partly into a coherent transmitter block as a light source. The coherent receiver includes a polarization-beam-splitter-rotator to split a coherent input signal to a TE-mode signal and a TM*-mode signal respectively detected by two 90-deg hybrid receivers and a flip-mounted TIA chip assisted by two local-oscillator signals from the tunable laser device. The coherent transmitter includes a driver chip flip-mounted on the silicon photonics substrate to drive a pair of Mach-Zehnder modulators with 90-degree shift in quadrature-phase branches to modulate the laser output to two polarized signals with I/Q modulation and uses a polarization-beam-rotator-combiner to combine them as a coherent output signal.

Integrated coherent optical transceiver, light engine

Heat sink cover

An optical transceiver includes a silicon photonics substrate and multiple devices. The devices are configured to process optical signals propagating to and from the optical transceiver, and to perform at least one of an optical-to-electrical conversion of received optical signals to incoming electric signals and an electrical-to-optical conversion of outgoing electric signals to transmitted optical signals. The devices are each fabricated to include respectively a package substrate configured according to one of multiple different package substrate mounting technologies. Each package substrate among the multiple devices is mounted on the silicon photonics substrate according to mounting requirements of the respective package substrate mounting technology of that package substrate. At least two of the package substrates are mounted according to the mounting requirements of different package substrate mounting technologies.

Integrated optical transceiver

An optical module for transmitting data from a data center via a dense wavelength division multiplex (DWDM) grid includes an optical modulator, a multiplexer, and a transmitter. The optical modulator modulates first and second optical signals pulse amplitude modulation for transmission over first and second wavelengths, respectively. The first wavelength is separated from the second wavelength according to a spacing of the DWDM grid for transmitting data at a selected baud rate. The multiplexer multiplexes the modulated first and second optical signals into a multiplexed optical signal, which includes the modulated first optical signal having the first wavelength and the modulated second optical signal having the second wavelength, and outputs the multiplexed optical signal. A transmitter transmits the multiplexed optical signal via the DWDM grid at the selected baud rate.

Optical module

A method for forming a silicon photonics interposer having through-silicon vias (TSVs). The method includes forming vias in a front side of a silicon substrate and defining primary structures for forming optical devices in the front side. Additionally, the method includes bonding a first handle wafer to the front side and thinning down the silicon substrate from the back side and forming bumps at the back side to couple with a conductive material in the vias. Furthermore, the method includes bonding a second handle wafer to the back side and debonding the first handle wafer from the front side to form secondary structures based on the primary structures. Moreover, the method includes forming pads at the front side to couple with the bumps at the back side before completing final structures based on the secondary structures and debonding the second handle wafer from the back side.

Light engine based on silicon photonics TSV interposer

The present invention is directed to communication systems and methods. According to an embodiment, a receiving optical transceiver determines signal quality for signals received from a transmitting optical transceiver. Information related to the signal quality is embedded into back-channel data and sent to the transmitting optical transceiver. The transmitting optical transceiver detects the presence of the back-channel data and adjusts one or more of its operating parameters based on the back-channel data. There are other embodiments as well.

Closed loop module control for communication based on signal quality

A semiconductor optical amplifier for high-power operation includes a gain medium having a multilayer structure sequentially laid with a P-layer, an active layer, a N-layer from an upper portion to a lower portion in cross-section thereof. The gain medium is extendedly laid with a length L from a front facet to a back facet. The active layer includes multiple well layers formed by undoped semiconductor material and multiple barrier layers formed by n-doped semiconductor materials. Each well layer is sandwiched by a pair of barrier layers. The front facet is characterized by a first reflectance Rf and the back facet is characterized by a second reflectance Rb. The gain medium has a mirror loss αabout 40-200 cmgiven by: α=(½L)ln{1/(Rf×Rb)}.

Silicon-photonics-based semiconductor optical amplifier with N-doped active layer

An optical module configured to control a peer to peer transaction includes a silicon photonics substrate, memory formed on the silicon photonics substrate and configured to store a private key, application circuitry formed on the silicon photonics substrate and coupled to the memory, the application circuitry configured to receive, via an external interface, an electrical signal carrying instructions for executing a transaction, verify the transaction using the private key stored in the memory, and selectively generate a transaction message including information for completing the transaction, and optical communication circuitry formed on the silicon photonics substrate and responsive to the application circuitry, the optical communication circuitry configured to generate an optical signal based on the transaction message and transmit the optical signal to at least one remote entity.

Silicon photonics based module for executing peer-to-peer transactions

A laser chip for flip-chip bonding on a silicon photonics chip with passive alignment features. The laser chip includes a chip body made of a p-region and a n-region in vertical direction and extended from a front facet to a rear facet in longitudinal direction, a pair of first vertical stoppers formed respectively beyond two sides of the chip body based on a wider width of the n-region, an active region buried in the chip body between the p-region and the n-region in the vertical direction and extended from the front facet to the rear facet in the longitudinal direction, an alignment mark formed on a top surface of the p-region near the front facet with a lateral distance defined in sub-micron precision relative to the active region; and a thin metal film on the surface of the p-region having a cleaved edge shared with the front facet.

Laser chip for flip-chip bonding on silicon photonics chips

Growing community of inventors

Santa Clara, CA, United States of America

Radhakrishnan L Nagarajan