Array Photonics, Inc.

Radek Roucka

Ting Liu

Ferran Suarez

Sabeur Siala

Aymeric Maros

Jordan Lang

Arsen Sukiasyan

Evan Pickett

Ivan Hernandez

Semiconductor optoelectronic devices having a dilute nitride active layer are disclosed. In particular, the semiconductor devices have a dilute nitride active layer with a bandgap within a range from 0.7 eV and 1 eV. Photodetectors comprising a dilute nitride active layer have a responsivity of greater than 0.6 A/W at a wavelength of 1.3 &#x3bc;m.

Short wavelength infrared optoelectronic devices having a dilute nitride layer

Semiconductor devices and methods of fabricating semiconductor devices having a dilute nitride layer and at least one semiconductor material overlying the dilute nitride layer are disclosed. Hybrid epitaxial growth and the use of aluminum barrier layers to minimize hydrogen diffusion into the dilute nitride layer are used to fabricate high-efficiency multijunction solar cells.

Hybrid MOCVD/MBE epitaxial growth of high-efficiency lattice-matched multijunction solar cells

Growing community of inventors

East Palo Alto, CA, United States of America

Radek Roucka