Translucent, Inc.

Radek Roucka

Andrew C Clark

Erdem Arkun

Michael S Lebby

Rytis Dargis

Scott Semans

A method of fabricating a layer of single crystal III-N material on a silicon substrate includes epitaxially growing a REO template on a silicon substrate. The template includes a REO layer adjacent the substrate with a crystal lattice spacing substantially matching the crystal lattice spacing of the substrate and selected to protect the substrate from nitridation. Either a rare earth oxynitride or a rare earth nitride is formed adjacent the upper surface of the template and a layer of single crystal III-N material is epitaxially grown thereon.

Nucleation of III-N on REO templates

A method of fabricating a rare earth oxide buffered III-N on silicon wafer including providing a crystalline silicon substrate, depositing a rare earth oxide structure on the silicon substrate including one or more layers of single crystal rare earth oxide, and depositing a layer of single crystal III-N material on the rare earth oxide structure so as to form an interface between the rare earth oxide structure and the layer of single crystal III-N material. The layer of single crystal III-N material produces a tensile stress at the interface and the rare earth oxide structure has a compressive stress at the interface dependent upon a thickness of the rare earth oxide structure. The rare earth oxide structure is grown with a thickness sufficient to provide a compressive stress offsetting at least a portion of the tensile stress at the interface to substantially reduce bowing in the wafer.

Strain compensated REO buffer for III-N on silicon

A method of depositing III-V solar collection materials on a GeSn template on a silicon substrate including the steps of providing a crystalline silicon substrate and epitaxially growing a single crystal GeSn layer on the silicon substrate using a grading profile to grade Sn through the layer. The single crystal GeSn layer has a thickness in a range of approximately 3 &#x3bc;m to approximately 5 &#x3bc;m. A layer of III-V solar collection material is epitaxially grown on the graded single crystal GeSn layer. The graded single crystal GeSn layer includes Sn up to an interface with the layer of III-V solar collection material.

III-V semiconductor interface with graded GeSn on silicon

A method of growing GaN material on a silicon substrate includes providing a single crystal silicon substrate with a (100) surface orientation or a (100) with up to a 10&#xb0; offset surface orientation and using epi-twist technology, epitaxially growing a single crystal stress managing layer on the silicon substrate. The single crystal stress managing layer includes rare earth oxide with a (110) crystal orientation and a cubic crystal structure. The method further includes epitaxially growing a single crystal buffer layer on the stress managing layer. The single crystal buffer layer includes rare earth oxide with a lattice spacing closer to a lattice spacing of GaN than the rare earth oxide of the stress managing layer. Epitaxially growing a layer of single crystal GaN material on the surface of the buffer, the GaN material having one of a (11-20) crystal orientation and a (0001) crystal orientation.

GaN on Si(100) substrate using epi-twist

A method of forming a template on a silicon substrate includes the step of providing a single crystal silicon substrate having a protective layer of amorphous silicon oxide on an upper surface thereof. A working area is delineated on the upper surface of the silicon substrate and a rare earth metal oxide is formed on the upper surface of the silicon substrate within the working area. The rare earth metal oxide is crystal lattice matched to the upper surface of the silicon substrate to form a template for further operations and portions of the upper surface outside the working area are covered with the protective layer of amorphous silicon oxide.

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Mountain View, CA, United States of America

Radek Roucka