Cambridge Enterprise Limited

The University of Manchester

Rachel A Oliver

Yingjun Liu

Tongtong Zhu

Peter Griffin

Menno Johannes Kappers

David Wallis

Philip Dawson

Stephen Church

David Binks

A method for etching a semiconductor structure () is provided, the semiconductor structure comprising a sub-surface quantum structure () of a first III-V semiconductor material, beneath a surface layer () of a second III-V semiconductor material having a charge carrier density of less than 5×10cm. The sub-surface quantum structure may comprise, for example, a quantum well, or a quantum wire, or a quantum dot. The method comprises the steps of exposing the surface layer to an electrolyte (), and applying a potential difference between the first III-V semiconductor material and the electrolyte, to electrochemically etch the sub-surface quantum structure () to form a plurality of nanostructures, while the surface layer () is not etched. A semiconductor structure, uses thereof, and devices incorporating such semiconductor structures are further provided.

Method for electrochemically etching a semiconductor structure

A semiconductor structure comprising a matrix having a first cubic Group-III nitride with a first band gap, and a second cubic Group-III nitride having a second band gap and forming a region embedded within the matrix. The second cubic Group-III nitride comprises an alloying material which reduces the second band gap relative to the first band gap, a quantum wire is defined by a portion within the region embedded within the matrix, the portion forming a one-dimensional charge-carrier confinement channel, wherein the quantum wire is operable to exhibit emission luminescence which is optically polarised.

Polarised emission from quantum wires in cubic GaN

A method for porosifying a Ill-nitride material in a semiconductor structure is provided, the semiconductor structure comprising a sub-surface structure of a first Ill-nitride material, having a charge carrier density greater than 5&#xd7;10cm, beneath a surface layer of a second Ill-nitride material, having a charge carrier density of between 1&#xd7;10cmand 1&#xd7;10cm. The method comprises the steps of exposing the surface layer to an electrolyte, and applying a potential difference between the first Ill-nitride material and the electrolyte, so that the sub-surface structure is porosified by electrochemical etching, while the surface layer is not porosified. A semiconductor structure and uses thereof are further provided.

Method for porosifying a material and semiconductor structure

A method for etching a semiconductor structure () is provided, the semiconductor structure comprising a sub-surface quantum structure () of a first III-V semiconductor material,beneath a surface layer () of a second III-V semiconductor material having a charge carrier density of less than 5&#xd7;10cm. The sub-surface quantum structure may comprise, for example, a quantum well, or a quantum wire, or a quantum dot. The method comprises the steps of exposing the surface layer to an electrolyte (), and applying a potential difference between the first III-V semiconductor material and the electrolyte, to electrochemically etch the sub-surface quantum structure () to form a plurality of nanostructures, while the surface layer () is not etched. A semiconductor structure, uses thereof, and devices incorporating such semiconductor structures are further provided.

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Cambridge, United Kingdom

Rachel A Oliver