National Research Council of Canada

Rabah Boukherroub

Danial D M Wayner

David John Lockwood

Nobuyoshi Koshida

Sylvie Morin

James Wojtyk

A method is disclosed for stabilizing porous silicon. A porous silicon structure having a surface terminated with hydrogen atoms is subjected to organic thermal processing to substitute the hydrogen atoms with a protective organic layer. The resulting structures are found to have unprecedented stability.

Passivation of porous semiconductors

A porous silicon structure is stabilized by anodically oxidizing the structure and then subjecting it to chemical functionalization to protect non-oxidized surface regions, preferably in the presence of 1-decene under thermal conditions. This process creates a protective organic monolayer on the surface of the structure, rendering it highly stable.

Luminescence stabilization of anodically oxidized porous silicon layers

A method is disclosed for stabilizing porous silicon. A porous silicon structure having a surface terminated with hydrogen atoms is subjected to organic thermal processing to substitute the hydrogen atoms with a protective organic layer. The resulting structure are found to have unprecedented stability.

Provided is a method for modifying silicon with an organic molecule, under mild conditions. If the attached molecule is bi-functional, it may be subsequently reacted with a bio-molecule, to form a covalently attached layer of bio-molecule on the silicon surface.

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Ottawa, Canada

Rabah Boukherroub