Texas Instruments Corporation

R Travis Summerlin

Joseph A Devore

Taylor R Efland

William E Grose

A voltage level shifting circuit (,) and method for accomplishing a voltage level change includes a voltage level shifting circuit (,) to change an input voltage to a shifted voltage level. A second stage (,) is connected between a voltage source at the shifted voltage level (,) and the reference potential. The second stage (,) includes active devices (,) that are controlled by the voltage level shifting circuit (,). The second stage (,) also includes slope resistors (,) connected in series between the active devices (,) of the second stage (,).

MOSFET predrive circuit with independent control of the output voltage rise and fall time, with improved latch immunity

An integrated circuit chip (,) may comprise an integrated circuit (,) formed in a semiconductor layer (,). A thermal contact (,) may be formed at a high temperature region of the integrated circuit (,). A thick plated metal layer (,) may be generally isolated from the integrated circuit (,). The thick plated metal layer (,) may include a base (,) and an exposed surface (,) opposite the base (,). The base (,) may be coupled to the thermal contact (,) to receive thermal energy of the high temperature region. The exposed surface (,) may dissipate thermal energy received by the thick plated metal layer (,).

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Parker, TX, United States of America

R Travis Summerlin