Texas Instruments Corporation

Quzhi He

Amitava Chatterjee

Wei William Lee

Maureen A Hanratty

Iqbal Ali

Greg A Hames

A transistor having an improved sidewall gate structure and method of construction is provided. The improved sidewall gate structure may include a semiconductor substrate (,) having a channel region (,). A gate insulation (,) may be adjacent the channel region (,) of the semiconductor substrate (,). A gate (,) may be formed adjacent the gate insulation (,). A sidewall insulation body (,) may be formed adjacent a portion of the gate (,). The sidewall insulation body (,) is comprised of a silicon oxynitride material. An epitaxial layer (,) may be formed adjacent a portion of the sidewall insulation body (,) and adjacent the semiconductor substrate (,) substantially outward of the channel region (,). A buffer layer (,) may be formed adjacent a portion of the sidewall insulation body (,) and adjacent the epitaxial layer (,).

Transistor having an improved sidewall gate structure and method of construction

A transistor having an improved sidewall gate structure and method of construction is provided. The improved sidewall gate structure may include a semiconductor substrate (12) having a channel region (20). A gate insulation (36) may be adjacent the channel region (20) of the semiconductor substrate (12). A gate (38) may be formed adjacent the gate insulation (36). A sidewall insulation body (28) may be formed adjacent a portion of the gate (38). The sidewall insulation body (28) is comprised of a silicon oxynitride material. An epitaxial layer (30) may be formed adjacent a portion of the sidewall insulation body (28) and adjacent the semiconductor substrate (12) substantially outward of the channel region (20). A buffer layer (32) may be formed adjacent a portion of the sidewall insulation body (28) and adjacent the epitaxial layer (30).

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Quzhi He