Crystal Solar, Inc.

Svagos Technik, Inc.

Vserv Technologies

Quoc Vinh Truong

Visweswaren Sivaramakrishnan

Tirunelveli Subramaniam Ravi

Andrzej Kaszuba

Kedarnath Sangam

Jean Rene Vatus

N William Parker

Mahendran Chidambaram

Timothy Norpell Kleiner

Jerry Schock

The disclosed subject matter relates to a microcapsule including a particle core selected from activated carbon (AC), super activated carbon (SAC), MOF composition, multifunctional material or a mixture thereof and a water-soluble polymer shell, including a membrane into which the microcapsule is incorporated, a membrane with exposed AC, SAC, MOF, or multifunctional materials or mixture thereof formed therefrom and methods used is the formation of all of the above.

Water extractable microcapsules of activated carbon, super activated carbon, and other adsorptive and reactive materials

A system for depositing thin single crystal silicon wafers by epitaxial deposition in a silicon precursor depletion mode with cross-flow deposition may include: a substrate carrier with low total heat capacity, high emissivity and small volume; a lamp module with rapid heat-up, efficient heat production, and spatial control over heating; and a manifold designed for cross-flow processing. Furthermore, the substrate carrier may include heat reflectors to control heat loss from the edges of the carrier and/or heat chokes to thermally isolate the carrier from the manifolds, allowing independent temperature control of the manifolds. The carrier and substrates may be configured for deposition on both sides of the substrates&#x2014;the substrates having release layers on both sides and the carriers being configured to have equal process gas flow over both surfaces of the substrate. High volume may be addressed by a deposition system comprising multiple mini-batch reactors.

Silicon wafers by epitaxial deposition

A CVD reactor for single sided deposition of material on substrates, may comprise: an upper gas manifold and a lower gas manifold; a substrate carrier comprising a gas tight rectangular box open on upper and lower surfaces, a multiplicity of planar walls across the width of the box, the walls being equally spaced in a row facing each other and defining a row of channels within the box, the walls comprising mounting fixtures for a plurality of substrates and at least one electrically resistive heater element; and clamps within the vacuum chamber for making electrical contact to the at least one electrically resistive heater element; wherein the upper gas manifold and the lower gas manifold are configured to attach to the upper and lower surfaces of the substrate carrier, respectively, connect with upper and lower ends of the channels, and isolate gas flows in odd numbered channels from gas flows in even numbered channels, wherein the channels are numbered in order along the row, and wherein the gas flows comprise, for each of the gas manifolds, an exhaust gas flow and a process gas flow.

CVD reactor chamber with resistive heating and substrate holder

An epitaxial reactor enabling simultaneous deposition of thin films on a multiplicity of wafers is disclosed. During deposition, a number of wafers are contained within a wafer sleeve comprising a number of wafer carrier plates spaced closely apart to minimize the process volume. Process gases flow preferentially into the interior volume of the wafer sleeve, which is heated by one or more lamp modules. Purge gases flow outside the wafer sleeve within a reactor chamber to minimize deposition on the chamber walls. Sequencing of the illumination of the individual lamps in the lamp module may further improve the linearity of variation in deposition rates within the wafer sleeve. To improve uniformity, the direction of process gas flow may be varied in a cross-flow configuration. Combining lamp sequencing with cross-flow processing in a multiple reactor system enables high throughput deposition with good film uniformities and efficient use of process gases.

High throughput multi-wafer epitaxial reactor

An epitaxial reactor enabling simultaneous deposition of thin films on a multiplicity of wafers is disclosed. During deposition, a number of wafers are contained within a wafer sleeve comprising a number of wafer carrier plates spaced closely apart to minimize the process volume. Process gases flow preferentially into the interior volume of the wafer sleeve, which is heated by one or more lamp modules. Purge gases flow outside the wafer sleeve within a reactor chamber to minimize wall deposition. In addition, sequencing of the illumination of the individual lamps in the lamp module may further improve the linearity of variation in deposition rates within the wafer sleeve. To improve uniformity, the direction of process gas flow may be varied in a cross-flow configuration. Combining lamp sequencing with cross-flow processing in a multiple reactor system enables high throughput deposition with good film uniformities and efficient use of process gases.

An epitaxial reactor enabling simultaneous deposition of thin films on a multiplicity of wafers is disclosed. During deposition, a number of wafers are contained within a wafer sleeve comprising a number of wafer carrier plates spaced closely apart to minimize the process volume. Process gases flow preferentially into the interior volume of the wafer sleeve, which is heated by one or more lamp modules. Purge gases flow outside the wafer sleeve within a reactor chamber to minimize deposition on the walls of the chamber. In addition, sequencing of the illumination of the individual lamps in the lamp module may further improve the linearity of variation in deposition rates within the wafer sleeve. To improve uniformity, the direction of process gas flow may be varied in a cross-flow configuration. Combining lamp sequencing with cross-flow processing in a multiple reactor system enables high throughput deposition with good film uniformities and efficient use of process gases.

A robot assembly for transferring substrates includes a central tube assembly oriented along a central axis, perpendicular to a substrate transfer plane, and having an inner surface that forms part of a first enclosure at a first pressure, and an outer surface that forms part of a second enclosure at a second, different pressure. The robot assembly further includes a transfer robot which itself includes multiple rotor assemblies, each configured to rotate parallel to the substrate transfer plane. The various rotor assemblies are organized in pairs, each pair having one rotor fitted with a telescoping support arm/end effector arrangement to support substrates thereon, and the other rotor fitted with inner and outer actuator arms that cooperate to effect radial movement of the corresponding end effector of the paired rotor assembly. Each rotor is controlled to effect the transfer of substrates within a wafer processing system asynchronously and at differing heights.

Growing community of inventors

San Leandro, CA, United States of America

Quoc Vinh Truong