Imec Vzw

Imec

Katholieke Universiteit Leuven, Ku Leuven R&d

Interuniversitair Micorelektronica Centrum (imec, Vzw)

Katholieke Universiteit Leuven

Quoc Toan Le

Mikhail Rodionovich Baklanov

Silvia Armini

Guy Vereecke

Frank Holsteyns

Mikhaïl Baklanov

Konstantin Petrovich Mogilnikov

Henricus Philipsen

Laurent Souriau

Yiting Sun

Patrick Verdonck

Els Kesters

A method for etching one or more entities on a semiconductor structure, each entity being made of a material selected from metals and metal nitrides is provided. The method includes the steps of: (a) oxidizing by electrolysis, at a current of at least 0.1 A, a precursor solution comprising chloride anions at a concentration ranging from 0.01 mol/l to 1.0 mol/l, thereby forming an etching solution; (b) providing a semiconductor structure having the one or more entities thereon; and (c) etching at least partially the one or more entities by contacting them with the etching solution.

Etching using an electrolyzed chloride solution

A method is provided for activating an exposed surface of a porous dielectric layer, the method comprising the steps of: filling with a first liquid at least the pores present in a part of the porous dielectric layer, the part comprising the exposed surface, removing the first liquid selectively from the surface, activating the exposed surface, and removing the first liquid from the bulk part of the porous dielectric layer.

Method for activating a porous layer surface

Methods for fabricating porous low-k materials are provided, such as plasma enhanced chemically vapor deposited (PE-CVD) and chemically vapor deposited (CVD) low-k films used as dielectric materials in between interconnect structures in semiconductor devices. More specifically, a new method is provided which results in a low-k material with significant improved chemical stability and improved elastic modulus, for a porosity obtained.

Fabrication of porogen residues free low-k materials with improved mechanical and chemical resistance

A method for removing a hardened photoresist from a semiconductor substrate. An example method for removing a hardened photoresist layer from a substrate comprising a low-&#x3ba; dielectric material preserving the characteristics of the low-&#x3ba;dielectric material includes: a)&#x2014;providing a substrate comprising a hardened photoresist layer and a low-&#x3ba; dielectric material at least partially exposed; b)&#x2014;forming C&#x2550;C double bonds in the hardened photoresist by exposing the hardened photoresist to UV radiation having a wavelength between 200 nm and 300 nm in vacuum or in an inert atmosphere; c)&#x2014;breaking the C&#x2550;C double bonds formed in step b) by reacting the hardened photoresist with ozone (O) or a mixture of ozone (O) and oxygen (O) thereby fragmenting the hardened photoresist; and d)&#x2014;removing the fragmented photoresist obtained in step c) by wet processing with cleaning chemistries.

Method for removing a hardened photoresist

Methods for the quantification of hydrophilic properties of a porous material, as well as determining a depth of damage of a porous material are disclosed. An example method includes performing a first ellipsometric measurement on the porous material using a first adsorptive having a first wetting angle. The example method further includes performing a second ellipsometric measurement on the porous material using a second adsorptive having a second wetting angle, wherein the first and second wetting angles are different towards the porous material. The hydrophilic properties of the porous material are determined based, at least in part, on the first and second ellipsometric measurements.

Method for the quantification of hydrophilic properties of porous materials

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Belgrade, Belgium

Quoc Toan Le