Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Thales

Quentin Wilmart

Karim Hassan

Bertrand Szelag

Jean-Michel Hartmann

André Myko

A process for fabricating an optoelectronic system having an optical device coupled to an integrated photonic circuit includes producing a lower waveguide from the thin single-crystal-silicon layer of a first SOI substrate, then joining a second SOI substrate thereto and producing an intermediate waveguide from the thin single-crystal-silicon layer of the second SOI substrate.

Process for fabricating a photonics-on-silicon optoelectronic system comprising an optical device coupled to an integrated photonic circuit

The fabrication of a first waveguide made of stoichiometric silicon nitride, of a second waveguide made of crystalline semiconductor material and of at least one active component optically coupled to the first waveguide via the second waveguide. The method includes: a) the formation of an aperture which passes through an encapsulation layer of the first waveguide and emerges in or on a substrate made of monocrystalline silicon, then b) the deposition by epitaxial growth of a crystalline seeding material inside the aperture until this crystalline seeding material forms a crystalline seed on a top face of the encapsulation layer, then c) a lateral epitaxy, of a crystalline semiconductor material from the crystalline seed formed to form a layer made of crystalline semiconductor material wherein the second waveguide is then produced.

Method for fabricating a photonic chip

A wavelength-tunable laser emission device includes a cavity delimited by a first and a second Sagnac mirror. The cavity has an amplifying medium and a tunable spectral filter using the Vernier effect. The filter includes at least three resonant rings arranged in cascade, each resonant ring integrating a loop mirror with wavelength tunable reflectivity.

Tunable Vernier effect laser emission device

The invention is concerned with a structured optical fibre sensor, comprising a light source (), a detection system () and a Bragg grating optical fibre () connected to said source and said system. The light source is a wavelength-tunable laser emission device () comprising a cavity (CA) delimited by a first and a second Sagnac mirror (M, M). The cavity comprises an amplifying medium (AM) and a tunable spectral filter using the Vernier effect (F), said filter (F) comprising at least three resonant rings (R, R, R, R) arranged in cascade, each resonant ring integrating a wavelength-tunable reflectivity loop mirror (MBR).

Structured optical fibre sensor integrating a tunable vernier effect laser emission device

A semiconductor laser source including a Mach-Zehnder interferometer including first and second arms. Each of these arms being divided into a plurality of consecutive sections. The first and second arms each include a gain-generating section forming first and second gain-generating waveguides, respectively. The laser source includes power sources able to deliver currents through the gain-generating waveguides such that the following condition is met: where: kis a preset integer number higher than or equal to 1, Nand Nare the numbers of sections in the first and second arms, respectively, Land Lare the lengths of the nth sections of the first and second arms, respectively, neffand neffare the effective indices of the nth sections of the first and second arms, respectively.

Semiconductor laser source and method for emitting with this laser source

A semiconductor laser source including a Mach-Zehnder interferometer, this interferometer including first and second arms. Each of the arms is divided into a plurality of consecutive sections, the effective index of each section located immediately after a preceding section being different from the effective index of this preceding section. The lengths of the various sections meet the following condition: where: kis a preset integer number higher than or equal to 1, Nand Nare the numbers of sections in the first and second arms, respectively, Land Lare the lengths of the nth sections of the first and second arms, respectively, neffand neffare the effective indices of the nth sections of the first and second arms, respectively. The first and second arms each comprise a gain-generating section.

Semiconductor laser source

Provided is a device for modulating or switching an optical signal, comprising a first ring waveguide made of a first material with at least one p-n or p-i-n junction, and a second ring waveguide arranged axially opposite the first ring waveguide. The second ring waveguide is made of a second material that has a thermo-optic coefficient lower than the thermo-optic coefficient of the first material. The first ring waveguide is a sub-wavelength network.

Growing community of inventors

Grenoble, France

Quentin Wilmart