Beijing Naura Microelectronics Equipment Co., Ltd.

Quanyu Shi

Mengxin Zhao

Jinrong Zhao

Hougong Wang

Qiwei Huang

Hua Ye

Jinguo Zheng

Shuaitao Shi

The present disclosure provides an electrostatic chuck and a reaction chamber. The electrostatic chuck includes an insulation layer and a heating body arranged at a bottom of the insulation layer. The electrostatic chuck further includes a cooling pipeline. The cooling pipeline is arranged under the heating body, spaced apart from the heating body, and configured to transfer cooling liquid to absorb heat radiated by the heating body. The electrostatic chuck further includes a thin-wall structure respectively connected to the heating body and the cooling pipeline. The thin-wall structure is configured to reduce heat dissipation efficiency between the heating body and the cooling pipeline. The electrostatic chuck provided by the present disclosure may realize stable temperature control for the heating body during a processing process to effectively reduce whisker defects and to improve the product yield.

Electrostatic chuck and reaction chamber

Electrostatic chuck for semiconductor manufacture

Embodiments of the present disclosure provide a mask structure and a filtered cathodic vacuum arc (FCVA) apparatus. The mask structure is configured to prepare protrusions on a carrying surface of an electrostatic chuck and includes a main mask plate and a side mask plate that are made of a conductive metal. The main mask plate is configured to form a patterned film layer corresponding to the protrusions on the carrying surface of the electrostatic chuck. The side mask is configured to cover a side surface of the electrostatic chuck to avoid forming a film layer on the side surface. The mask structure can be electrically conductive. The mask structure may prevent the side surface of the electrostatic chuck from being coated when the protrusions are prepared on the carrying surface of the electrostatic chuck. Thus, the mask structure may be applied to an FCVA process.

Mask structure and FCVA apparatus

The present disclosure provides an electrostatic chuck (ESC) and a method for manufacturing the plurality of protrusions of the ESC. The electrostatic chuck includes a support surface for carrying a workpiece and the plurality of protrusions distributed at intervals on the support surface. The protrusions are formed by a hydrogen-free amorphous carbon with a resistivity ranging from 10&#x3a9;&#xb7;cm&#x2dc;10&#x3a9;&#xb7;cm. For the ESC provided by the present disclosure, the protrusions are formed by the hydrogen-free amorphous carbon and have a high hardness and a good wear resistance, which may effectively prevent a generation of particles. As such, the negative impact of the particles on the semiconductor process may be avoided, and the hydrogen does not dissociate in a high-temperature environment. Thereby, a problem that the protrusions may easily fall off and may not be suitable in the high-temperature environment (above 250&#xb0; C.) may be solved.

Electrostatic chuck and method for manufacturing protrusions thereof

An electrostatic chuck includes a support assembly including a base, a chuck placed at the base and configured to carry a workpiece, and a fastening assembly configured to removably fix the chuck at the base.

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Beijing, China

Quanyu Shi