Xiamen San'an Optoelectronics Co., Ltd

Quanzhou Sanan Semiconductor Technology Co., Ltd.

Quanyang Ma

Su-Hui Lin

Chung-Ying Chang

Ling-Yuan Hong

Qing Wang

Dazhong Chen

Hongwei Xia

Kang-Wei Peng

Jiali Zhuo

Shiwei Liu

Huining Wang

Shuo Yang

Renlong Yang

Weibin Shi

A light-emitting device includes an epitaxial structure that includes a first semiconductor layer, an active layer and a second semiconductor layer. The light-emitting device further has a transparent current spreading unit, a first electrode and a second electrode. The transparent current spreading unit includes a first transparent current spreading layer and a second transparent current spreading layer. The first transparent current spreading layer is doped with aluminum and has a thickness that accounts for 0.5% to 33% of a thickness of the transparent current spreading unit. The second transparent current spreading layer has a thickness greater than that of the first transparent current spreading layer. A light-emitting apparatus includes a circuit control component, and a light source that is coupled to the circuit control component and that includes the aforesaid light-emitting device.

Light-emitting device

A light-emitting device includes a substrate, multiple light-emitting units that are disposed on the substrate, that are spaced apart by an isolation trench and that are and electrically interconnected by an interconnecting structure, and an insulating layer with thickness of 200 nm to 450 nm. A potential difference between adjacent two light-emitting units not in direct electrical connection is at least two times forward voltage of each of the light-emitting units. Each light-emitting unit includes a light-emitting stack and a light-transmissible current spreading layer. The insulating layer covers the light-transmissible current spreading layers and at least a part of the light-emitting stacks.

High voltage light-emitting device

A light-emitting diode (LED) includes a transmissible substrate, an epitaxial layered structure, a distributed Bragg reflector (DBR) structure, a first electrode, and a second electrode. The epitaxial layered structure is disposed on the transmissible substrate. The DBR structure is disposed on the epitaxial layered structure opposite to the transmissible substrate. The DBR structure has at least one first through hole and at least one second through hole, and is formed with a plurality of voids. The first electrode and the second electrode are electrically connected to the first semiconductor layer and the second semiconductor layer, respectively. An LED packaged module including the LED is also disclosed.

Light-emitting diode, light-emitting diode packaged module and display device including the same

A light-emitting device includes a light-emitting laminated structure, a first electrode, and a second electrode. The first electrode has a reflection layer, an intermediate layer, and an electrically conductive layer. The intermediate layer includes a barrier layer having a first repeating paired layer unit and a second repeating paired layer unit, each of which has a platinum layer. The first repeating paired layer unit is closer to the electrically conductive layer than the second repeating paired layer unit, and a thickness of the platinum layer of the first repeating paired layer unit is greater than a thickness of the platinum layer of the second repeating paired layer unit.

Light emitting device

High-voltage light-emitting device

Growing community of inventors

Fujian, China

Quanyang Ma