Tamura Corporation

Novel Crystal Technology, Inc.

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Kohei Sasaki

Daiki Wakimoto

Yuki Koishikawa

A method for manufacturing a semiconductor film includes placing a semiconductor substrate including a β-GaO-based single crystal in a reaction chamber of an HVPE apparatus. When the semiconductor substrate is placed so that the growth base surface faces upward, an inlet for a dopant-including gas into the space is positioned higher than an inlet for an oxygen-including gas into the space and an inlet for a Ga chloride gas into the space is positioned higher than the inlet for the dopant-including gas into the space. When the semiconductor substrate is placed so that the growth base surface faces downward, the inlet for the dopant-including gas into the space is positioned higher than the inlet for the Ga chloride gas into the space and the inlet for the oxygen-including gas into the space is positioned higher than the inlet for the dopant-including gas into the space.

Method of manufacturing a beta-GaO-based single crystal film by flowing a Ga chloride gas, an oxygen gas, and a dopant gas

A Schottky barrier diode includes a semiconductor layer including a GaO-based single crystal, an anode electrode that forms a Schottky junction with the semiconductor layer and is configured so that a portion in contact with the semiconductor layer includes Mo or W, and a cathode electrode. A turn-on voltage thereof is not less than 0.3 V and not more than 0.5 V.

Schottky barrier diode

Provided is a Schottky barrier diode which is configured from a GaO-based semiconductor, and has a lower rising voltage than a conventional one. In one embodiment, the Schottky barrier diodeis provided which has: a semiconductor layerconfigured from a GaO-based single crystal; an anode electrodewhich forms a Schottky junction with the semiconductor layer, and has a portion which contacts the semiconductor layerand is composed of Fe or Cu; and a cathode electrode

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Sayama, Japan

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