Samsung Electronics Co., Ltd.

Sungkyunkwan University

Intellectual Discovery Co., Ltd.

Quang Trung Tran

Kyung-Eun Byun

Jong-Jin Park

Sang-hun Jeon

Thanh Tien Nguyen

Nae-eung Lee

Ji-hyun Bae

Do-il Kim

Nae Eung Lee

Do Il Kim

A pressure sensor and a pressure sensing method are provided. The pressure sensor includes a substrate; a sensor thin film transistor (TFT) disposed on the substrate and including a gate insulating layer, wherein the gate insulating layer includes an organic matrix in which piezoelectric inorganic nano-particles are dispersed; a power unit configured to apply an alternating current (AC) signal to a gate of the sensor TFT; and a pressure sensing unit configured to obtain a remnant polarization value based on a drain current which is generated in response to the AC signal and detected by the sensor TFT, and to sense a pressure based on the remnant polarization value.

Pressure sensor and pressure sensing method

Provided is a strain sensing device using reduced graphene oxide (R-GO). The strain sensing device includes a flexible substrate, a gate electrode formed on the flexible substrate, a gate insulating layer configured to cover the gate electrode and include a part formed of a flexible material, an active layer formed of R-GO for sensing a strain, on the gate insulating layer, and a source and drain electrode formed on the active layer.

Strain sensing device using reduced graphene oxide and method of manufacturing the same

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Suwon-si, South Korea

Quang Trung Tran