South China University of Technology

Quanbin Zhou

Hong Yang Wang

Rulian Wen

Xiaolong Hu

Qixin Li

A preparation method for a metal-doped gallium oxide transparent conductive thin film for ultraviolet waveband includes: growing a contact layer thin film () on a substrate () first, and annealing the grown contact layer thin film () in a nitrogen-oxygen atmosphere at 400° C. to 600° C. through a rapid thermal annealing furnace; growing a first GaOthin film () by sputtering through magnetron sputtering under argon conditions; growing a doped thin film () by sputtering through magnetron sputtering under argon conditions; growing a second GaOthin film () by sputtering through magnetron sputtering under argon conditions; and annealing the grown thin films in a nitrogen-oxygen atmosphere at 500° C. to 600° C. through a rapid thermal annealing furnace, so that permeation, diffusion and fusion occur between thin film materials to form a metal-doped GaOthin film (). A metal-doped gallium oxide transparent conductive thin film for ultraviolet waveband is provided.

Conductive thin film for ultraviolet waveband and preparation method therefor

An epitaxial structure of a GaN-based radio frequency device based on a Si substrate and a manufacturing method thereof are provided. The epitaxial structure is composed of a Si substrate (), an AlN nucleation layer (), AlGaN buffer layers (), a GaN:Fe/GaN high-resistance layer (), a GaN superlattice layer (), a GaN channel layer (), an AlGaN barrier layer () and a GaN cap layer () which are stacked in turn from bottom to top, wherein the GaN:Fe/GaN high-resistance layer () is composed of an intentional Fe-doped GaN layer and an unintentional doped GaN layer which are alternately connected; the GaN superlattice layer () is composed of a low-pressure/low V/III ratio GaN layer and a high-pressure/high V/III ratio GaN layer which are periodically and alternately connected.

Epitaxial structure of GaN-based radio frequency device based on Si substrate and its manufacturing method

The present invention provides a GaN-based microwave power device with a large gate width and manufacturing method thereof. The device includes an AlGaN/GaN heterojunction epitaxial layer, a first dielectric layer overlying the AlGaN/GaN heterojunction epitaxial layer, a strip-like source electrode, a drain electrode distributed in a shape of a fishbone, an annular gate electrode, a second dielectric layer separating upper and lower electrodes, and an interconnect metal electrode pad. The GaN-based microwave power device with the large gate width prepared according to the present invention, has a small phase shift of the signals, a small parasitic capacitance of the device, a high signal gain, high power added efficiency and a high output power. At the same time, the manufacturing process of the device is simple, the chip area is saved, and the device has a good repeatability.

GaN-based microwave power device with large gate width and manufacturing method thereof

An enhancement-mode GaN-based HEMT device on Si substrate and a manufacturing method thereof. The device includes a Si substrate, an AlN nucleation layer, AlGaN transition layers, an AlGaN buffer layer, a low temperature AlN insertion layer, an AlGaN main buffer layer, an AlGaN/GaN superlattice layer, an GaN channel layer, and an AlGaN barrier layer. Both sides of a top end of the HEMT device are a source electrode and a drain electrode respectively, and a middle of the top end is a gate electrode. A middle of the AlGaN barrier layer is etched through to form a recess, and a bottom of the recess is connected to the GaN channel layer. A passivation protective layer and a gate dielectric layer are deposited on the bottom of the recess, and the gate electrode is located above the dielectric layer.

Growing community of inventors

Guangdong, China

Quanbin Zhou