Asml Netherlands B.v.

Sap Se

Quan Zhang

Rafael C Howell

Been-Der Chen

Yen-Wen Lu

Yi Zou

Sudhir Bhojwani

Jing Su

Jingjing Liu

Tu Truong

Roshni Biswas

Sandeep Chakravarty

Fuming Wu

Richa Namballa

Sudha Lakshman

Cuiping Zhang

Ningning Jia

Boyang Huang

Zhangnan Zhu

Yong-Ju Cho

Yue Li

Lin Dong

A method for generating a mask pattern to be employed in a patterning process. The method including obtaining (i) a first feature patch including a first polygon portion of an initial mask pattern, and (ii) a second feature patch including a second polygon portion of the initial mask pattern; adjusting the second polygon portion at a patch boundary between the first feature patch and the second feature patch such that a difference between the first polygon portion and the second polygon portion at the patch boundary is reduced; and combining the first polygon portion and the adjusted second polygon portion at the patch boundary to form the mask pattern.

Method for generating patterning device pattern at patch boundary

A method for determining a patterning device pattern. The method includes obtaining (i) an initial patterning device pattern having at least one feature, and (ii) a desired feature size of the at least one feature, obtaining, based on a patterning process model, the initial patterning device pattern and a target pattern for a substrate, a difference value between a predicted pattern of the substrate image by the initial patterning device and the target pattern for the substrate, determining a penalty value related the manufacturability of the at least one feature, wherein the penalty value varies as a function of the size of the at least one feature, and determining the patterning device pattern based on the initial patterning device pattern and the desired feature size such that a sum of the difference value and the penalty value is reduced.

Method for determining patterning device pattern based on manufacturability

A method to determine a curvilinear pattern of a patterning device that includes obtaining (i) an initial image of the patterning device corresponding to a target pattern to be printed on a substrate subjected to a patterning process, and (ii) a process model configured to predict a pattern on the substrate from the initial image, generating, by a hardware computer system, an enhanced image from the initial image, generating, by the hardware computer system, a level set image using the enhanced image, and iteratively determining, by the hardware computer system, a curvilinear pattern for the patterning device based on the level set image, the process model, and a cost function, where the cost function (e.g., EPE) determines a difference between a predicted pattern and the target pattern, where the difference is iteratively reduced.

Method for determining curvilinear patterns for patterning device

Provided is a method and system for normalizing catalog item data to create higher quality search results. In one example, the method may include receiving a record comprising an unstructured description of an object, identifying a type of the object from among a plurality of object types and identifying a predefined attribute of the identified type of object, extracting a value from the unstructured description corresponding to the predefined attribute and modifying the extracted value to generate a normalized attribute value, and storing a structured record of the object in a structured format comprising a plurality of values of a plurality of attributes of the object from the unstructured description including the normalized attribute value for the predefined attribute of the object.

Normalization of unstructured catalog data

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San Jose, CA, United States of America

Quan Zhang