Semiconductor Manufacturing International (shanghai) Corporation

Quan Li

Chi Liu

Ta Lee Yu

A semiconductor device for ESD protection includes a semiconductor substrate of a first conductivity type and a well region of a second conductivity type formed within the substrate. The well region is characterized by a first depth. The device includes an MOS transistor, a first bipolar transistor, and a second bipolar transistor. The MOS transistor includes a first lightly doped drain (LDD) region of a second depth within the well region, and a drain region and an emitter region within in the first LDD region. The emitter region is characterized by a second conductivity type. The first bipolar transistor is associated with the emitter region, the first LDD region, and the well region, and is characterized by a first trigger voltage. The second bipolar transistor is associated with the first LDD region, the well region, and the substrate, and is characterized by a second trigger voltage.

Integrated electrostatic discharge (ESD) device

A method for making a semiconductor device includes providing a substrate of a first conductivity type and having a surface region, forming a well region of a second conductivity type and having a first depth in the substrate, adding a gate dielectric layer overlying the surface region, adding a gate layer overlying the gate dielectric layer, forming a first LDD region of the first conductivity type and having a second depth within the well region, forming an emitter region of the second conductivity type within the first LDD region, and forming a second LDD region of the first conductivity type with the well region, a channel region separates the first and second LDD regions. The method further includes forming a source region being of the first conductivity type within the second LDD region and adding an output pad coupled to both the drain and emitter regions.

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Shanghai, China

Quan Li