Beijing Naura Microelectronics Equipment Co., Ltd.

Beijing Zitiao Network Technology Co., Ltd.

Qiwei Huang

Bing Li

Quanyu Shi

Lang Chen

Xu Bai

Weiwei Lyu

Hongrui Guo

An avatar method, apparatus and device, and a medium are provided. The method includes: acquiring a target image in response to a user input; and obtaining an avatar corresponding to the target image by using a first generator; the first generator being trained and obtained on the basis of a first sample image set and a second sample image set generated by a three-dimensional model. In the present disclosure, by using the first generator, the generation method for an avatar is effectively simplified, thus improving generation efficiency, and avatars in one-to-one correspondence to target image can be generated, so that the avatars are more diversified. Additionally, the first generator is easy to deploy in various production environments, thus reducing the performance requirements on hardware devices.

Avatar generation method, apparatus and device, and medium

The present disclosure provides an electrostatic chuck and a reaction chamber. The electrostatic chuck includes an insulation layer and a heating body arranged at a bottom of the insulation layer. The electrostatic chuck further includes a cooling pipeline. The cooling pipeline is arranged under the heating body, spaced apart from the heating body, and configured to transfer cooling liquid to absorb heat radiated by the heating body. The electrostatic chuck further includes a thin-wall structure respectively connected to the heating body and the cooling pipeline. The thin-wall structure is configured to reduce heat dissipation efficiency between the heating body and the cooling pipeline. The electrostatic chuck provided by the present disclosure may realize stable temperature control for the heating body during a processing process to effectively reduce whisker defects and to improve the product yield.

Electrostatic chuck and reaction chamber

Embodiments of the present disclosure disclose a physical vapor deposition (PVD) chamber and a PVD apparatus. The PVD chamber includes a chamber body. An upper electrode assembly is arranged in the chamber body. The upper electrode assembly includes a base plate assembly for carrying a magnetron, a backplate arranged at an interval with the base plate assembly, and a connection assembly that connects the base plate assembly to the backplate. The connection assembly is connected to the base plate assembly. The connection assembly is threadedly connected to the backplate, so that the interval between the base plate assembly and the backplate can be adjusted by moving the connection assembly relative to the backplate. The PVD chamber and the PVD apparatus of embodiments of the present disclosure can conveniently adjust a size of a target magnetic gap between the base plate assembly and the target according to requirements or actual conditions.

Physical vapor deposition chamber and physical vapor deposition apparatus

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Beijing, China

Qiwei Huang