International Business Machines Corporation

Tianma Micro-electronics Co., Ltd.

Shanghai Tianma Am-oled Co., Ltd.

Cantor Colburn Llp

Qiong Xu

Hui Zhu

Feng Cao

Yuan Ni

Jianjun Zhang

Embodiments of the disclosure provide a method for fabricating a lightly doped drain area, a thin film transistor, and a thin film transistor array substrate. In an embodiment of the disclosure, a poly-silicon layer, a gate insulation layer, and a gate metal layer are formed in sequence on a substrate; the gate metal layer is patterned to form a gate electrode; the gate insulation layer is etched to form a stepped structure, wherein a width of the gate electrode is smaller than a width of the stepped structure, and an edge of the stepped structure is not covered by the gate electrode; and the poly-silicon layer is doped by an ion doping process using the gate electrode and the gate insulation layer with the stepped structure as a mask to form both a lightly doped area and a heavily doped area.

Method for fabricating lightly doped drain area, thin film transistor and array substrate

A method, a disambiguation decoder and a system is provided for disambiguation in concept identification. A set of candidate concepts of a surface form in a sequence of surface forms in a plaintext is obtained. First probabilities for the candidate concepts are then determined, wherein a first probability indicates likelihood that the surface form represents the respective candidate concept. One of the candidate concepts is selected for the surface form based on the first probabilities and adjacency of the surface forms in the sequence.

Disambiguation in concept identification

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Shanghai, China

Qiong Xu