Yangtze Memory Technologies Co., Ltd.

Qinxiang Wei

Ji Xia

Jian Hua Sun

Jianhua Sun

Li Hong Xiao

Zhenyu Lu

Yushi Hu

Qian Tao

Yu Ting Zhou

Xiaowang Dai

Zhao Hui Tang

Sizhe Li

Mei Lan Guo

Qianbing Xu

Sha Sha Liu

EnBo Wang

ZhiWu Tang

In an example, a three-dimensional (3D) memory device includes a memory stack and a through stair contact (TSC). The memory stack includes interleaved conductive layers and dielectric layers. The memory stack includes stairs in a staircase region. The TSC extends through the memory stack in the staircase region. The TSC includes a first conductor layer and a first spacer circumscribing the first conductor layer. The first conductor layer of the TSC is insulated from the conductive layers of the memory stack by the first spacer.

Three-dimensional memory devices having through stair contacts and methods for forming the same

Embodiments of three-dimensional (3D) memory devices having through stair contacts (TSCs) and methods for forming the same are disclosed. In an example, a 3D memory device includes a memory stack and a TSC. The memory stack includes a plurality of interleaved conductive layers and dielectric layers. Edges of the interleaved conductive layers and dielectric layers define a staircase structure on a side of the memory stack. The TSC extends vertically through the staircase structure of the memory stack. The TSC includes a conductor layer and a spacer circumscribing the conductor layer.

Embodiments of counter-stress structures and methods for forming the same are disclosed. The present disclosure describes a semiconductor wafer including a substrate having a dielectric layer formed thereon and a device region in the dielectric layer. The device region includes at least one semiconductor device. The semiconductor wafer further includes a sacrificial region adjacent to the device region, wherein the sacrificial region includes at least one counter-stress structure configured to counteract wafer stress formed in the device region.

Structures and methods for reducing stress in three-dimensional memory device

Embodiments of interconnect structures of a three-dimensional (3D) memory device and method for forming the interconnect structures are disclosed. In an example, a 3D NAND memory device includes a semiconductor substrate, an alternating layer stack disposed on the semiconductor substrate, and a dielectric structure, which extends vertically through the alternating layer stack, on an isolation region of the substrate. Further, the alternating layer stack abuts a sidewall surface of the dielectric structure and the dielectric structure is formed of a dielectric material. The 3D memory device additionally includes one or more through array contacts that extend vertically through the dielectric structure and the isolation region, and one or more channel structures that extend vertically through the alternating layer stack.

Through array contact (TAC) for three-dimensional memory devices

Embodiments of three-dimensional (3D) memory devices having through stair contacts (TSCs) and methods for forming the same are disclosed. In an example, a method for forming a 3D memory device is disclosed. A dielectric stack including a plurality of interleaved dielectric layers and sacrificial layers is formed on a substrate. A staircase structure is formed on one side of the dielectric stack. A dummy hole extending vertically through the staircase structure and reaching the substrate is formed. A spacer having a hollow core is formed in the dummy hole. A TSC in contact with the substrate is formed by depositing a conductor layer in the hollow core of the spacer. The TSC extends vertically through the staircase structure.

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Hubei, China

Qinxiang Wei