Hefechip Corporation Limited

Qinli Ma

Shu-Jen Han

Wei-Chuan Chen

Youngsuk Choi

Hong-Hui Hsu

A magnetic tunneling junction (MTJ) element includes a reference layer, a tunnel barrier layer on the reference layer, a free layer on the tunnel barrier layer, and a composite capping layer on the free layer. The composite capping layer comprises a diffusion-stop layer on the free layer, a light-element sink layer on the diffusion-stop layer, and an amorphous layer on the light-element sink layer.

Magnetic tunneling junction element with a composite capping layer and magnetoresistive random access memory device using the same

A magnetic tunnel junction (MTJ) element including a free layer, a reference layer; and a tunnel barrier layer between the free layer and the reference layer. The reference layer includes a first pinned layer, a second pinned layer, an anti-ferromagnetic coupling (AFC) spacer layer between the first pinned layer and the second pinned layer, a first spacer layer adjacent to the second pinned layer, a second spacer layer, a ferromagnetic layer sandwiched by the first spacer layer and the second spacer layer, a polarization enhancement layer adjacent to the second spacer layer.

Magnetic tunnel junction element with a robust reference layer

A storage layer of a magnetic tunnel junction (MTJ) element is disclosed. The storage layer having perpendicular magnetic anisotropy includes a first ferromagnetic layer, a first dust layer disposed directly on the first ferromagnetic layer, a second ferromagnetic layer disposed directly on the first dust layer, a second dust layer disposed directly on the second ferromagnetic layer, and a third ferromagnetic layer disposed directly on the second dust layer. A material of the first dust layer is different from a material of the second dust layer.

Asymmetric engineered storage layer of magnetic tunnel junction element for magnetic memory device

A method for fabricating a magnetic tunneling junction (MTJ) element is disclosed. A substrate is provided. A reference layer is formed on the substrate. A tunnel barrier layer is formed on the reference layer. A free layer is formed on the tunnel barrier layer. A composite capping layer is formed on the free layer. The composite capping layer comprises an amorphous layer, a light-element sink layer, and/or a diffusion-stop layer. The reference layer, the tunnel barrier layer, the free layer, and the composite capping layer constitute an MTJ stack.

Method for fabricating magnetic tunneling junction element with a composite capping layer

A semiconductor memory structure includes a substrate, a magnetic tunneling junction (MTJ) stack disposed on the substrate, and an encapsulation layer surrounding the MTJ stack. The encapsulation layer comprises an outer silicon oxynitride layer with a composition of SiONand an inner silicon oxynitride layer with a composition of SiON, wherein x1/y1&#x3e;x2/y2.

Semiconductor memory structure with magnetic tunneling junction stack and method for forming the same

A composite storage layer for magnetic memory devices includes a first ferromagnetic layer, a tri-layered spacer stack disposed on the first ferromagnetic layer, a second ferromagnetic layer disposed on the tri-layered spacer stack, and an oxide capping layer on the second ferromagnetic layer. The tri-layered spacer stack comprises a first non-magnetic layer, a discontinuous, insulating oxide layer, and a second non-magnetic layer. The discontinuous, insulating oxide layer is sandwiched by the first non-magnetic layer and the second non-magnetic layer.

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Mt. Kisco, NY, United States of America

Qinli Ma