Samsung Electronics Co., Ltd.

Sungkyunkwan University

Qinke Wu

Hwansoo Suh

Insu Jeon

Young-jae Song

Seong-jun Jung

Minwoo Kim

Sung-kyu Jang

Sangwoo Park

Youngjae Song

Sungjoo Lee

Sung-joo Lee

Min Wang

Min-woo Kim

A seamless hexagonal h-BN atomic monolayer thin film has a pseudo-single crystal structure including a plurality of h-BN grains that are seamlessly merged. Each of the h-BN grains has a dimension in a range from about 10 &#x3bc;m to about 1,000 &#x3bc;m. The seamless hexagonal boron nitride (h-BN) atomic monolayer thin film may be fabricated by a process including pre-annealing a metal thin film at a first temperature in a chamber while supplying hydrogen gas to the chamber; supplying nitrogen source gas and boron source gas to the chamber; and forming the seamless h-BN atomic monolayer thin film having a pseudo-single crystal atomic monolayer structure having a grain dimension in a range from about 10 &#x3bc;m to about 1,000 &#x3bc;m by annealing the pre-annealed metal thin film at a second temperature.

Seamless hexagonal boron nitride atomic monolayer thin film and method of fabricating the same

Provided are a magnetic resistance structure, a method of manufacturing the magnetic resistance structure, and an electronic device including the magnetic resistance structure. The method of manufacturing the magnetic resistance structure includes forming a hexagonal boron nitride layer, forming a graphene layer on the boron nitride layer, forming a first magnetic material layer between the boron nitride layer and the graphene layer according to an intercalation process; and forming a second magnetic material layer on the graphene layer.

Magnetic resistance structure, method of manufacturing the magnetic resistance structure, and electronic device including the magnetic resistance structure

According to example embodiments, a method of forming a multilayer graphene structure includes forming a sacrificial layer on the growth substrate, growing a first graphene layer on the sacrificial layer using a chemical vapor deposition (CVD) method, and growing at least one more graphene layer on the growth substrate. The growing at least one more graphene layer includes removing at least a part of the sacrificial layer.

Method of forming multilayer graphene structure

Growing community of inventors

Suwon-si, South Korea

Qinke Wu