Mitsui Chemicals, Inc.

The University of Tokyo

Toto Ltd.

Tokyo University of Science Foundation

Japan Technological Research Association of Artificial Photosynthetic Chemical Process

Japan Technological Research Association of Artificial Photosynthesis Chemical Process

Qingxin Jia

Kazunari Domen

Hiromasa Tokudome

Takashi Hisatomi

Sayuri Okunaka

Qian Wang

Akihiko Kudo

Akihide Iwase

A photocatalytic member comprises a base and a photocatalytic layer fixed on the base. The photocatalytic layer comprises first photocatalyst particles being visible light responsive photocatalyst particles for hydrogen generation, second photocatalyst particles being visible light responsive photocatalyst particles for oxygen generation, and conductive particles which are provided between the first photocatalyst particle and the second photocatalyst particle, have Fermi level at a negative position relative to an electronic energy level at the upper end of the valence band of the first photocatalyst particle and at a positive position relative to an electronic energy level at the bottom end of the conduction band of the second photocatalyst particle, and are able to store an electron and a hole. In the photocatalytic layer, the conductive particles are located to be coupled to both the first photocatalyst particles and the second photocatalyst particles.

Photocatalyst material and method for producing same

A new BiVO-laminate manufacturing method and BiVOlaminate are provided. A bismuth-vanadate laminate is manufactured as follows: a substrate that can be heated by microwaves is disposed inside a precursor solution containing a vanadium salt and a bismuth salt, microwave-activated chemical bath deposition (MW-CBD) is used to form a bismuth-vanadate layer on the substrate, and a firing process is performed as necessary. A bismuth-vanadate laminate manufactured in this way is suitable for use as a photocatalyst or photoelectrode.

Bismuth-vanadate-laminate manufacturing method and bismuth-vanadate laminate

Growing community of inventors

Tokyo, Japan

Qingxin Jia