Wuhan Xinxin Semiconductor Manufacturing Co., Ltd.

Qingwei Luo

Yun Li

Jun Zhou

Chenglong Wu

Shengnan Huang

A defect relieving method for a floating gate is disclosed, which includes: providing a front-end structure, including an active region, a gate oxide layer on the active region, a mask layer on the gate oxide layer, a plurality of trenches penetrating through the mask layer, the gate oxide layer, and at least part of the active region, and a filler that is filled in the trenches; performing a first etching process to remove a first thickness of the mask layer between adjacent ones of the trenches; performing a second etching process to remove a remaining thickness of the mask layer between the adjacent trenches, and reducing a width of a portion of the filler that exceeds a top surface of the gate oxide layer, thereby an opening is formed; and filling the opening with a floating gate. The method increases the diameter of the opening, thus avoiding occurrence of voids.

Defect relieving method for floating gate, and semiconductor structure

A method for alleviating an etching defect of a salicide barrier layer is disclosed. The salicide barrier layer includes a first barrier layer, a second barrier layer and a third barrier layer. When the salicide barrier layer is being etched, the third barrier layer is removed during first etching. In this case, the second barrier layer is used as an etch stop layer, and the second barrier layer is removed during second etching. In this case, the first barrier layer is used as an etch stop layer, the first barrier layer is removed during third etching. The salicide barrier layer is divided into three layers, the second barrier layer and the first barrier layer are respectively used as an etch stop layer, so that the third barrier layer and the second barrier layer can be prevented from being over-etched, thereby effectively avoiding defects caused by over-etching and alleviating device performance.

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Hubei, China

Qingwei Luo