University of Nebraska

Qingfeng Dong

Jinsong Huang

Qi Wang

Yuchuan Sao

Xiaopeng Zheng

Zhengguo Xiao

Rui Dong

Yang Bai

Cheng Bi

Yuchuan Shao

Perovskite-based photoactive devices, such as solar cells, include an insulating tunneling layer inserted between the perovskite photoactive material and the electron collection layer to reduce charge recombination and concomitantly provide water resistant properties to the device.

Insulating tunneling contact for efficient and stable perovskite solar cells

Continuous processes for fabricating a perovskite device are described that include forming a perovskite layer or film on a substrate using a linear deposition device, and optionally using a conductive tape lamination process to form an anode or a cathode layer on the perovskite device.

Systems and methods for scalable perovskite device fabrication

Systems and methods for perovskite single crystal growth include using a low temperature solution process that employs a temperature gradient in a perovskite solution in a container, also including at least one small perovskite single crystal, and a substrate in the solution upon which substrate a perovskite crystal nucleates and grows, in part due to the temperature gradient in the solution and in part due to a temperature gradient in the substrate. For example, a top portion of the substrate external to the solution may be cooled.

Method for single crystal growth of photovoltaic perovskite material and devices

Continuous processes for fabricating a perovskite device are described that include using a doctor blade for continuously forming a perovskite layer and using a conductive tape lamination process to form an anode or a cathode layer on the perovskite device.

A semiconductor device and a method for fabrication of the semiconductor device are described that include a perovskite layer formed using a solution process with lead iodine and methylammonium halide. In an implementation, a semiconductor device that employs example techniques in accordance with the present disclosure includes a cathode layer; an anode layer; and an active layer disposed between the cathode layer and the anode layer, where the active layer includes a perovskite layer including an interdiffused and annealed lead iodine (PbI) film and methylammonium halide (CHNHX) film. In implementations, a process for fabricating a continuous-perovskite semiconductor device that employs example techniques in accordance with the present disclosure includes spinning a PbIlayer onto an ITO-covered glass; spinning an MAI layer onto the PbIlayer; annealing the PbIlayer and the MAI layer; spinning a PCBM layer onto a resulting perovskite layer; and depositing an Al layer.

Growing community of inventors

Lincoln, NE, United States of America

Qingfeng Dong