Xiamen San'an Optoelectronics Co., Ltd

Contemporary Amperex Technology Co., Ltd.

Contemporary Amperex Technology (Hong Kong) Limited

Xiamen Sanan Optoelectronics Technology Co., Ltd.

Quanzhou Sanan Semiconductor Technology Co., Ltd.

Contemporary Amperex Technology Limited

Qing Wang

Ling-Yuan Hong

Su-Hui Lin

Kang-Wei Peng

Dazhong Chen

Chung-Ying Chang

Quanyang Ma

Peng Wang

Anhe He

Yong Wang

Pengbo Zhao

Xingdi Chen

Linggang Zhou

Chia-Hung Chang

Jiansen Zheng

Derong Wang

Sheng-hsien Hsu

Suhui Lin

Zhiming Chen

Feng Wang

Shiwei Liu

Gaolin Zheng

Yu-Chieh Huang

Lingfeng Yin

Yujia Hou

Xiaoliang Liu

Xi Wang

Pengcheng Yao

Chuangui Liu

Yide Ou

Yifeng Chen

Minyou He

Jiangbin Zeng

Binbin Chen

Xiushan Zhu

Shengjie Hu

Shuai Ren

Huimin Miao

Danyue Xue

A light-emitting diode chip includes a light-emitting unit, a first electrode, an insulating layer, and a second electrode. The first electrode is disposed on the light-emitting unit. The insulating layer is disposed on the first electrode and the light-emitting unit, and has a through hole and a hole-defining wall. The hole-defining wall has a top peripheral edge that has two opposite end points. A projection of at least one of the end points of the top peripheral edge on the light-emitting unit falls outside a projection of a top surface of the first electrode on the light-emitting unit. The second electrode is disposed on the insulating layer and fills the through hole to electrically connect to the first electrode.

Light-emitting diode chip

A light-emitting device includes a semiconductor light-emitting stack, first and second electrodes, an insulating layer, and a passivation layer. Each of the first and second electrodes is disposed on the semiconductor light-emitting stack. The insulating layer at least partially covers the semiconductor light-emitting stack. The passivation layer is disposed on the insulating layer, and covers the semiconductor light-emitting stack and a side surface of each of the first and second electrodes, to expose an upper surface of each of the first and second electrodes. The first electrode and the second electrode are separated by a distance that is greater than 0 μm and that is not greater than 80 μm.

Light-emitting device

A light-emitting device includes a carrier substrate, a flip-chip light-emitting diode (LED) mounted onto the carrier substrate, and an electrode unit disposed between the carrier substrate and the flip-chip LED. The electrode unit includes first and second connecting electrodes that have opposite conductivity. Each of the first and second connecting electrodes includes an intermediate metal layer and a binding layer that are sequentially disposed on the flip-chip LED in such order. The binding layer includes a first portion being adjacent to the carrier substrate and forming an eutectic system with tin, and a second portion located between the first portion and the intermediate metal layer.

Flip-chip light emitting diode having connecting electrodes with multiple binding layers including eutectic system with tin

A box structure includes a cooling member and a frame. The cooling member includes a main pipe and at least one branch pipe connected to the main pipe. The main pipe is configured to pass a coolant into the branch pipe, and the branch pipe is configured to contact the battery pack to cool the battery pack. An accommodation groove is created at a bottom of the frame, at least a part of the main pipe is located in the accommodation groove, and the main pipe is bonded and fixed to the accommodation groove.

Box structure, battery, and electrical device

A light-emitting device includes a substrate, multiple light-emitting units that are disposed on the substrate, that are spaced apart by an isolation trench and that are and electrically interconnected by an interconnecting structure, and an insulating layer with thickness of 200 nm to 450 nm. A potential difference between adjacent two light-emitting units not in direct electrical connection is at least two times forward voltage of each of the light-emitting units. Each light-emitting unit includes a light-emitting stack and a light-transmissible current spreading layer. The insulating layer covers the light-transmissible current spreading layers and at least a part of the light-emitting stacks.

High voltage light-emitting device

A light-emitting diode (LED) includes a transmissible substrate, an epitaxial layered structure, a distributed Bragg reflector (DBR) structure, a first electrode, and a second electrode. The epitaxial layered structure is disposed on the transmissible substrate. The DBR structure is disposed on the epitaxial layered structure opposite to the transmissible substrate. The DBR structure has at least one first through hole and at least one second through hole, and is formed with a plurality of voids. The first electrode and the second electrode are electrically connected to the first semiconductor layer and the second semiconductor layer, respectively. An LED packaged module including the LED is also disclosed.

Light-emitting diode, light-emitting diode packaged module and display device including the same

A casing of a battery, a battery and an electricity-consuming apparatus are provided by the present application. The casing of the battery includes a first beam, a second beam and a connecting assembly. A surface of the first beam is provided with a groove. The second beam is arranged on a side of the first beam provided with the groove. The first beam and the second beam is configured to limit a space for accommodating a battery cell. The connecting assembly is configured to connect the first beam with the second beam. At least a portion of the connecting assembly is arranged inside the first beam and the second beam.

Casing of battery, battery and electricity-consuming apparatus

High-voltage light-emitting device

The embodiment of the present application relates to the field of battery, and in particular relates to a battery, an electric apparatus, and a method for producing a battery. The battery of the present application includes: a battery cell; a box body configured for accommodating the battery cell and comprising a sleeve, and a first end cover and a second end cover for sealing both ends of the sleeve in a height direction respectively; a first insulating member, at least part of the first insulating member being located between the first end cover and the battery cell; and a second insulating member, at least part of the second insulating member being located between the second end cover and the battery cell; where an inner wall of the sleeve is provided with a fixing portion configured to fix the first insulating member and the second insulating member.

Battery, electric apparatus and method for producing battery

The present disclosure discloses a battery pack, including a plurality of battery modules. Each battery module includes: a battery row including a plurality of battery cells, each battery cell includes two electrodes and electrodes of all battery cells form two electrode rows arranging in the longitudinal direction; a flexible printed circuit board located between the two electrode rows; and two conductive connecting plate rows located on two sides of the flexible printed circuit board in the transverse direction respectively, each conductive connecting plate row includes a plurality of conductive connecting plates arranged in the longitudinal direction and spaced apart from each other, and each conductive connecting plate is electrically connected to the flexible printed circuit board and a corresponding electrode of a corresponding electrode row. Each battery module further includes an insulation cover covering and fixed to a top of the battery row to insulate each battery module from outside.

Battery pack

A light-emitting diode includes a substrate, a distributed Bragg reflector (DBR) structure and a semiconductor layered structure. The DBR structure is disposed on the substrate. The semiconductor layered structure is disposed on the DBR structure opposite to the substrate, and is configured to emit a light having a first wavelength. The DBR structure has a reflectance of not greater than 30% for the light having the first wavelength, and a reflectance of not smaller than 50% for a laser beam having a second wavelength that is different from the first wavelength.

Light-emitting diode and method for manufacturing the same

The present disclosure relates to a protective pressure plate and a battery module. The protective pressure plate comprises a pressure plate body having a strip-like shape. The pressure plate body includes an upper surface and a lower surface that are opposed in a thickness direction of the pressure plate body and two side surfaces that are opposed in a width direction of the pressure plate body. At least one portion of each of the side surfaces is recessed toward a center line of the pressure plate body to form a protective recess. The upper surface of the pressure plate body has a maximum width greater than a maximum width of the lower surface. The protective pressure plate according to the embodiment of the present disclosure can be used to fix the circuit board and protect the bonding wires, thereby improving the use safety and stability of the battery module.

Protective pressure plate and battery module

A light-emitting diode includes a substrate; a light-emitting epitaxial layer, laminated by semiconductor material layers and formed over the substrate; a first current spreading layer over the light-emitting epitaxial layer; an adhesive layer with alternating second current spreading layers and first metal barrier layers over the first current spreading layer, including three structure layers; a second metal barrier layer over the adhesive layer with alternating second current spreading layers and metal barrier layers; and a metal electrode layer over the second metal barrier layer.

Light-emitting diode and fabrication method thereof

Growing community of inventors

Fujian, China

Qing Wang