Synopsys, Inc.

Qing Su

Charles C Chiang

Subarnarekha Sinha

Zongwu Tang

Min Ni

Jamil Kawa

James David Sproch

Solaiman Rahim

Jianfeng Luo

Min-Chun Tsai

Vaibhav Jain

Yongqiang Lu

Eduard Petrus Huijbregts

Myunghoon Yoon

Youxin Gao

Mayur Bubna

Pankaj Singla

Stephan Houben

A method includes acquiring timing analysis data associated with a cell and activity data of one or more inputs of the cell, determining a glitch toggle rate for an output of the cell based on the activity data of the one or more inputs of the cell and the timing analysis data, and estimating a glitch power based on at least the glitch toggle rate.

Enhanced glitch estimation in vectorless power analysis

Glitch source identification and ranking is provided by: identifying a plurality of glitch sources in a circuit layout; back referencing the plurality of glitch sources to corresponding lines in a Resistor Transistor Logic (RTL) file defining the plurality of glitch sources; identifying, in the circuit layout, a plurality of glitch terminuses associated with the plurality of glitch sources; determining a plurality of glitch power consumption values associated with the plurality of glitch sources based on fanouts in the circuit layout extending from the plurality of glitch sources to the plurality of glitch terminuses; ranking, by a processor, the plurality of glitch sources based on corresponding glitch power consumption values of the plurality of glitch power consumption values corresponding to individual glitch sources of the plurality of glitch sources; and reporting the corresponding lines in the RTL file associated with the ranked plurality of glitch sources.

Glitch source identification and ranking

A system and method for performing operating state analysis of an integrated circuit (IC) design is disclosed. The method includes simulating a switching operation from a first operating state to a second operating state for one or more cells of the IC design using a plurality of vectors corresponding to one or more user-specified constraints. The method include generating a time-based waveform for each cell of the one or more cells changing an operating state from the first operating state to the second operating state, and based on the generated time-based waveform, identifying one or more operating state changes corresponding to the operating state analysis and associated timing window and cell information. The method includes verifying the one or more operating state changes by the each cell of the one or more cells of the IC design meet the one or more user-specified constraints for generating an analysis report.

Vector generation for maximum instantaneous peak power

Roughly described, an antenna diode is formed at least partially within the exclusion zone around a TSV, and is connected to the TSV by way of a metal 1 layer conductor at the same time that the TSV is connected to either the gate poly or a diffusion region of one or more transistors placed outside the exclusion zone.

ESD/antenna diodes for through-silicon vias

A convolution of the kernel over a layout in a multi-core processor system includes identifying a sector, called a dynamic band, of the layout including a plurality of evaluation points. Layout data specifying the sector of the layout is loaded in shared memory, which is shared by a plurality of processor cores. A convolution operation of the kernel and the evaluation points in the sector is executed. The convolution operation includes iteratively loading parts of the basis data set, called a stride, into space available in shared memory given the size of the layout data specifying the sector. A plurality of threads is executed concurrently using the layout data for the sector and the currently loaded part of the basis data set. The iteration for the loading basis data set proceeds through the entire data set until the convolution operation is completed.

Banded computation architectures

Convolution computation for many-core processor architectures

Method and apparatus for approximating the average critical area of a layout or layout region, involving summing, over all the object segments of interest, respective critical area contribution values that are dependent upon particular layout parameters of the objects, each of the contribution values being representative of a plurality of defect sizes, and being defined such that for each defect size in the plurality of defect sizes, and for a particular defect type, the contribution values collectively count all critical areas arising due to the object segments of interest only once.

Fast evaluation of average critical area for IC layouts

Roughly described, a method for mask data preparation is described, for use with a preliminary mask layout that includes a starting polygon, the vertices of the starting polygon including I-points (vertices of the starting polygon having an interior angle greater than 90 degrees), including steps of developing a rectilinear partition tree on at least the I-points of the starting polygon, and using the edges of the partition tree to define the partition of the starting polygon into sub-polygons for mask writing.

Steiner tree based approach for polygon fracturing

One embodiment of the present invention provides a system that predicts manufacturing yield for a die within a semiconductor wafer. During operation, the system first receives a physical layout of the die. Next, the system partitions the die into an array of tiles. The system then computes systematic variations for a quality indicative value to describe a process parameter across the array of tiles based on the physical layout of the die. Next, the system applies a random variation for the quality indicative parameter to each tile in the array of tiles. Finally, the system obtains the manufacturing yield for the die based on both the systematic variations and the random variations.

Predicting IC manufacturing yield by considering both systematic and random intra-die process variations

Fast evaluation of average critical area for ic layouts

One embodiment of the present invention provides a system that predicts a manufacturing yield of a chip. During operation, the system first receives a chip layout. Next, the system identifies hotspots within the chip layout, wherein a hotspot is a location within the chip layout wherein a yield-indicative variable value falls in a low manufacturable range. The system then obtains yield scores for the hotspots, wherein a yield score indicates a failure probability for a corresponding hotspot. Next, the system predicts the manufacturing yield for the chip based on the hotspots and the yield scores for the hotspots.

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Sunnyvale, CA, United States of America

Qing Su