Dow Global Technolgoies LLC

The Dow Chemical Company

Qing Shan J Niu

James P Godschalx

Kenneth J Bruza

Paul H Townsend, Iii

Edward Otto Shaffer, Ii

Kevin J Bouck

Dennis W Smith, Jr

Clark H Cummins

A suitable cross-linkable matrix precursor and a poragen can be treated to form a porous cross-linked matrix having a Tof greater than 300&#xb0; C. The porous matrix material has a lower dielectric constant than the corresponding non-porous matrix material, making the porous matrix material particularly attractive for a variety of electronic applications including integrated circuits, multichip modules, and flat panel display devices.

Composition containing a cross-linkable matrix precursor and a poragen, and porous matrix prepared therefrom

Composition containing a cross-linkable matrix precursor and a poragen, and a porous matrix prepared therefrom

A suitable cross-linkable matrix precursor and a poragen can be treated to form a porous cross-linked matrix having a T of greater than 300&deg; C. The porous matrix material has a lower dielectric constant than the corresponding non-porous matrix material, making the porous matrix material particularly attractive for a variety of electronic applications including integrated circuits, multichip modules, and flat panel display devices.

This invention is a polyarylene composition in which resin does not undergo a significant drop in modulus at temperatures above 300&deg; C. during cure. This feature enables one to form porous films by avoiding pore collapse and/or using a wider variety of poragen materials.

Polyarylene compositions with enhanced modulus profiles

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Midland, MI, United States of America

Qing Shan J Niu