Advanced Micro-fabrication Equipment, Inc. Asia

Advanced Ion Beam Technology, Inc.

Advanced Micro-fabrication Equipment Inc. China

Nuvosun, Inc.

Qing Qian

Ye Wy Wang

Jinyuan Chen

Yuehong Fu

Zhaoyang Xu

Xusheng Zhou

Tuqiang Q Ni

Jiong Chen

Dennis R Hollars

Tom Ni

Josef Bonigut

Zhming Wan

Bruce D Hachtmann

Xiaodong Liu

A plasma confinement apparatus, and method for confining a plasma are described and which includes, in one form of the invention, a plurality of electrically insulated components which are disposed in predetermined spaced relation, one relative to the others, and surrounding a processing region of a plasma processing apparatus, and wherein a plurality of passageways are defined between the respective insulated components; and at least one electrically conductive and grounded component forms an electrical field shielding for the processing region.

Plasma confinement apparatus, and method for confining a plasma

A plasma processing apparatus is described and which includes a chamber having at least two processing stations which are separated by a wall. At least one channel is formed in the wall, and wherein the channel has a width to length ratio of less than about 1:3.

Plasma processing apparatus

An ion implantation method is disclosed in this invention. The disclosed method is for implanting a target wafer with ions extracted from an ion source traveling along an original ion beam path. The method includes steps of a) employing a set of deceleration electrodes disposed along the original ion beam path before the target wafer for decelerating and deflecting the ion beam to the target wafer; and b) employing a charged particle deflecting means disposed between the ion source and the set of deceleration electrodes for deflecting the ion beam away from original ion beam path and projecting to the set of electrodes with an incident angle for the set of electrodes to deflect the ion beam back to the original ion beam path for implanting the target wafer.

Apparatus to decelerate and control ion beams to improve the total quality of ion implantation

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San Jose, CA, United States of America

Qing Qian