The Boc Group, Inc.

Rohm & Haas Electronic Materials LLC

Linde Gmbh

Rohm and Haas Electronics Materials LLC

Edwards Vacuum LLC

Qing Min Wang

Deodatta Vinayak Shenai-Khatkhate

Ce Ma

Frank R Fitch

Dongmin Shen

Martin B&uuml;low

Huazhi Li

Miu Ling Lau

James F Cameron

Adeola Florence Ojo

Juzer Jangbarwala

Martin Bulow

Christopher D Gilmore

Norberto O Lemcoff

Sudhakar R Jale

Richard A Hogle

Shuguang Deng

Philip Connolly

Daniel Greene

Ping Ding

Charles R Kinzie

Patrick Joseph Helly

Young-Seok Kim

Stephen J Manzik

Bao-Lian Su

Jean-Luc Blin

Richard Hogle

Patrick J Helly

Aaron Sullivan

Simon Purdon

Revati Pradhan Kasmalkar

Christopher Mark Bailey

Certain cyclopentadienone monomers having polar moieties are useful in forming polyarylene resins having improved solubility in certain organic solvents and are useful in forming polyarylene resin layers in electronics applications.

Polyarylene resins

Methods of vapor depositing metal-containing films using certain organometallic compounds containing a carbonyl-containing ligand are disclosed.

Organometallic compounds

Methods of forming metal-containing layers are provided where heteroleptic organometallic compounds containing at least one formamidinate ligand are conveyed in a gaseous form to a reactor; and films comprising a metal are deposited on a substrate. These heteroleptic organometallic compounds have improved properties over conventional vapor deposition precursors. Such compounds are suitable for use as vapor deposition precursors including direct liquid injection. Also provided are methods of depositing thin films, such as by ALD and CVD, using such compounds or their solutions in organic solvents.

Method of forming metal-containing layer using organometallic compounds

Organometallic compounds containing a phosphoamidinate ligand are provided. Such compounds are particularly suitable for use as vapor deposition precursors. Also provided are methods of depositing thin films, such as by ALD and CVD, using such compounds.

Organometallic compounds containing an electron donating group-substituted alkenyl ligand are provided. Such compounds are particularly suitable for use as vapor deposition precursors. Also provided are methods of depositing thin films, such as by ALD and CVD, using such compounds.

A unique combination of solution stabilization and delivery technologies with special ALD operation is provided. A wide range of low volatility solid ALD precursors dissolved in solvents are used. Unstable solutes may be stabilized in solution and all of the solutions may be delivered at room temperature. After the solutions are vaporized, the vapor phase precursors and solvents are pulsed into a deposition chamber to assure true ALD film growth.

Method and apparatus for using solution based precursors for atomic layer deposition

A process for separation and environmentally benign disposal of amine borane complexes includes adsorbing amine borane complex onto a solid support, treating the adsorbed amine borane complex with an oxidizing agent in situ on the adsorbent thereby forming decomposition products without the formation of hydrogen gas, and collecting the decomposition products for disposal thereof.

Process for stripping amine borane complex from an electroless plating solution

Organosilane CVD precursors and their use for making organosilane polymer low-k dielectric film

Methods for synthesizing extra low-k CVD precursors and forming extra low-k dielectric films on the surfaces of semiconductors wafers and integrated circuits are disclosed. An asymmetric organocyclosiloxane compound is applied to the surface where it will react with and form a film that will have a dielectric constant, k, from 2.0 to 2.5.

Asymmetric organocyclosiloxanes and their use for making organosilicon polymer low-k dielectric film

Metallo-organic polymers for gas separation and purification

Methods for depositing a low-k dielectric film on the surfaces of semiconductors and integrated circuits are disclosed. A Si&mdash;O&mdash;C-in-ring cyclic siloxane precursor compound is applied to the surface by chemical vapor deposition where it will react with the surface and form a film having a dielectric constant, k, less than 2.5. The compound generally has the formula (&mdash;O&mdash;R &mdash;O&mdash;)SiR R or the formula (&mdash;R &mdash;O&mdash;)SiR R .

Low-K dielectric constant CVD precursors formed of cyclic siloxanes having in-ring SI&mdash;O&mdash;C, and uses thereof

The present invention provides for novel solid state O -selective metal complex-based adsorbents and their utility for separating oxygen from a gas stream. In particular, the invention provides for an adsorption complex which contains four-coordinate O -selective metal complexes including oligomeric/polymeric metal complexes, and organic base-containing polymers supported on porous materials.

Oxygen-selective adsorbents

Novel compositions of molecular sieve adsorbents are provided in which at least 50% of the exchangeable cations are selected from those of Li, Ca, Ag and Cu and which have within their pore system metal oxide, metal oxide precursors or mixtures thereof. These compositions are useful for the separation of gases and, in particular, the separation of nitrogen from air to produce oxygen or oxygen-enriched gas.

Adsorbents and adsorptive separation process

Growing community of inventors

Edison, NJ, United States of America

Qing Min Wang