University of California

Cornell University

Other

Qing Ji

Ka-Ngo Leung

Arun Persaud

Thomas Schenkel

Amit Lal

Serhan Mehmet Ardanuc

Peter Seidl

Will Waldron

Vinaya Kumar Kadayra Basavarajappa

Ximan Jiang

Tsu-Jae King

Jani Petteri Reijonen

Keith Standiford

William A Barletta

Yung-Hee Yvette Lee

Joe Kwan

Richard A Gough

Lili Ji

Stephen Wilde

Amy V Sy

A wafer-based charged particle accelerator includes a charged particle source and at least one RF charged particle accelerator wafer sub-assembly and a power supply coupled to the at least one RF charged particle accelerator wafer sub-assembly. The wafer-based charged particle accelerator may further include a beam current-sensor. The wafer-based charged particle accelerator may further include at least a second RF charged particle accelerator wafer sub-assembly and at least one ESQ charged particle focusing wafer. Fabrication methods are disclosed for RF charged particle accelerator wafer sub-assemblies, ESQ charged particle focusing wafers, and the wafer-based charged particle accelerator.

Wafer-based charged particle accelerator, wafer components, methods, and applications

This disclosure provides systems, methods, and apparatus for ion generation. In one aspect, an apparatus includes an anode, a first cathode, a second cathode, and a plurality of cusp magnets. The anode has a first open end and a second open end. The first cathode is associated with the first open end of the anode. The second cathode is associated with the second open end of the anode. The anode, the first cathode, and the second cathode define a chamber. The second cathode has an open region configured for the passage of ions from the chamber. Each cusp magnet of the plurality of cusp magnets is disposed along a length of the anode.

Advanced penning ion source

A novel ion source is described having an improved lifetime. The ion source, in one embodiment, is a proton source, including an external RF antenna mounted to an RF window. To prevent backstreaming electrons formed in the beam column from striking the RF window, a back streaming electron dump is provided, which in one embodiment is formed of a cylindrical tube, open at one end to the ion source chamber and capped at its other end by a metal plug. The plug, maintained at the same electrical potential as the source, captures these backstreaming electrons, and thus prevents localized heating of the window, which due to said heating, might otherwise cause window damage.

RF-driven ion source with a back-streaming electron dump

Techniques for controllably directing beamlets to a target substrate are disclosed. The beamlets may be either positive ions or electrons. It has been shown that beamlets may be produced with a diameter of 1 &#x3bc;m, with inter-aperture spacings of 12 &#x3bc;m. An array of such beamlets, may be used for maskless lithography. By step-wise movement of the beamlets relative to the target substrate, individual devices may be directly e-beam written. Ion beams may be directly written as well. Due to the high brightness of the beamlets from extraction from a multicusp source, exposure times for lithographic exposure are thought to be minimized. Alternatively, the beamlets may be electrons striking a high Z material for X-ray production, thereafter collimated to provide patterned X-ray exposures such as those used in CAT scans. Such a device may be used for remote detection of explosives.

High brightness&#x2014;multiple beamlets source for patterned X-ray production

An extractor system for a plasma ion source has a single (first) electrode with one or more apertures, or a pair of spaced electrodes, a first or plasma forming electrode and a second or extraction electrode, with one or more aligned apertures. The aperture(s) in the first electrode (or the second electrode or both) have a counterbore on the downstream side (i.e. away from the plasma ion source or facing the second electrode). The counterbored extraction system reduces aberrations and improves focusing. The invention also includes an ion source with the counterbored extraction system, and a method of improving focusing in an extraction system by providing a counterbore.

Ion beam extractor with counterbore

A radio frequency (RF) driven plasma ion source has an external RF antenna, i.e. the RF antenna is positioned outside the plasma generating chamber rather than inside. The RF antenna is typically formed of a small diameter metal tube coated with an insulator. An external RF antenna assembly is used to mount the external RF antenna to the ion source. The RF antenna tubing is wound around the external RF antenna assembly to form a coil. The external RF antenna assembly is formed of a material, e.g. quartz, which is essentially transparent to the RF waves. The external RF antenna assembly is attached to and forms a part of the plasma source chamber so that the RF waves emitted by the RF antenna enter into the inside of the plasma chamber and ionize a gas contained therein. The plasma ion source is typically a multi-cusp ion source.

Ion source with external RF antenna

An electron beam system is based on a plasma generator in a plasma ion source with an accelerator column. The electrons are extracted from a plasma cathode in a plasma ion source, e.g. a multicusp plasma ion source. The beam can be scanned in both the x and y directions, and the system can be operated with multiple beamlets. A compact focused ion or electron beam system has a plasma ion source and an all-electrostatic beam acceleration and focusing column. The ion source is a small chamber with the plasma produced by radio-frequency (RF) induction discharge. The RF antenna is wound outside the chamber and connected to an RF supply. Ions or electrons can be extracted from the source. A multi-beam system has several sources of different species and an electron beam source.

Focused electron and ion beam systems

A focused ion beam (FIB) system produces a final beam spot size down to 0.1 .mu.m or less and an ion beam output current on the order of microamps. The FIB system increases ion source brightness by properly configuring the first (plasma) and second (extraction) electrodes. The first electrode is configured to have a high aperture diameter to electrode thickness aspect ratio. Additional accelerator and focusing electrodes are used to produce the final beam. As few as five electrodes can be used, providing a very compact FIB system with a length down to only 20 mm. Multibeamlet arrangements with a single ion source can be produced to increase throughput. The FIB system can be used for nanolithography and doping applications for fabrication of semiconductor devices with minimum feature sizes of 0.1 .mu.m or less.

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Albany, CA, United States of America

Qing Ji