Taiwan Semiconductor Manufacturing Comp. Ltd.

University of Michigan

Qing Dong

Carlos H Diaz

Yih Wang

Yue-Der Chih

David Theodore Blaauw

Tien-Chun Yang

Dennis Sylvester

Mahmut Sinangil

Yen-Ting Lin

Kerem Akarvardar

Zhiyoong Foo

Gyouho Kim

Disclosed herein are related to a circuit and a method of reading or sensing multiple bits of data stored by a multi-level cell. In one aspect, a first reference circuit is selected from a first set of reference circuits, and a second reference circuit is selected from a second set of reference circuits. Based at least in part on the first reference circuit and the second reference circuit, one or more bits of multiple bits of data stored by a multi-level cell can be determined. According to the determined one or more bits, a third reference circuit from the first set of reference circuits and a fourth reference circuit from the second set of reference circuits can be selected. Based at least in part on the third reference circuit and the fourth reference circuit, additional one or more bits of the multiple bits of data stored by the multi-level cell can be determined.

Series of parallel sensing operations for multi-level cells

A sub-nW voltage reference is presented that provides inherently low process variation and enables trim-free operation for low-dropout regulators and other applications in nW microsystems. Sixty chips from three different wafers in 180 nm CMOS are measured, showing an untrimmed within-wafer &#x3c3;/&#x3bc; of 0.26% and wafer-to-wafer &#x3c3;/&#x3bc; of 1.9%. Measurement results also show a temperature coefficient of 48-124 ppm/&#xb0; C. from &#x2212;40&#xb0; C. to 85&#xb0; C. Outputting a 0.986V reference voltage, the reference operates down to 1.2V and consumes 114 pW at 25&#xb0; C.

Variation-tolerant voltage reference

An intraocular pressure sensor is presented that achieve very low power consumption. The intraocular pressure sensor takes the form of an implantable assembly configured to be implanted in an eye of a subject. Specifically, the implantable assembly is comprised of a capsular tension ring attached to a flexible printed circuit board. The flexible printed circuit board includes a cutout that is sized to encircle the pupil of the eye and is C shaped. One or more electrical components are also mounted onto the flexible printed circuit board. One such component is a voltage reference generator that is implemented by a circuit which provides inherently low process variation and low power consumption.

Intraocular pressure sensor with improved voltage reference circuit

In a charge pump circuit, a first circuit is configured to provide a first node with a first first-voltage level or a first second-voltage level. A second circuit is configured to provide a second node with a second first-voltage level or a second second-voltage level. The first node is coupled with a first end of a first capacitive element. The second node is coupled with a first end of a second capacitive element. A first end of a first voltage transfer circuit is configured to receive an input voltage. A second end of the first voltage transfer circuit is coupled with a second end of the first capacitive element and a first end of a second voltage transfer circuit. A second end of the second voltage transfer circuit is coupled with a second end of the second capacitive element, and is configured to provide an output voltage.

Charge pump circuit and method of operating same

In a charge pump circuit, a first circuit is configured to provide a first node with a first first-voltage level or a first second-voltage level. A second circuit is configured to provide a second node with a second first-voltage level or a second second-voltage level. The first node is coupled with a first end of the first capacitive element. The second node is coupled with a first end of the second capacitive device. A first end of the first voltage transfer circuit is configured to receive an input voltage. A second end of the first voltage transfer circuit is coupled with a second end of the first capacitive device and a first end of the second voltage transfer circuit. A second end of the second voltage transfer circuit is coupled with a second end of the second capacitive element.

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Ann Arbor, MI, United States of America

Qing Dong