Globalfoundries Inc.

Qin Yuan

Mark S Chace

Janine L Protzman

Jun Liu

Charles Leon Arvin

Martin Glodde

Margaret C Lawson

Victoria L Calero Diaz Del Castillo

Nitin Jadhav

A method of forming a passivation layer on an integrated circuit (IC) chip including a device layer on a substrate. The method may include forming a crosslinked precursor passivation layer on the IC chip, and curing the crosslinked precursor passivation layer at a first temperature to form a passivation layer. The method may further include maintaining the device layer at a second, lower temperature during the curing of the crosslinked precursor passivation layer. Maintaining the device layer at the second, lower temperature may mitigate and/or prevent damage to the device layer conventionally caused by exposure to the first temperature during the curing of the crosslinked precursor passivation layer. The method may include using a curing system including a chamber, an infrared source for controlling the first temperature for curing the crosslinked precursor passivation layer, and a temperature control device for controlling the second, lower temperature of the device layer.

Method of forming a passivation layer

A formulation comprising an esterified polyamide resin with a photosensitive linkage, a polymerizable crosslinker, and an organic species is provided. The organic species is selected such that (a) when exposed to UV radiation, it copolymerizes with the polymerizable crosslinker and the photosensitive linkage on the esterified polyamide resin forming the crosslinking network, (b) during thermal cure the copolymer thus formed drops from polyimide backbones, and (c) wherein the thermal degradation temperature of the copolymer thus formed is lower than the thermal degradation temperature of the homopolymer formed from the polymerizable crosslinker and the thermal degradation temperature of the copolymer formed from the polymerizable crosslinker and the photosensitive linkage on the esterified polyamide resin. The formulation is useful in forming a semiconductor passivation layer and facilitates more complete removal of crosslinker using less stringent conditions.

Additions of organic species to facilitate crosslinker removal during PSPI cure

A tin-based solder melt or aqueous tin plating bath composition comprising a source of tin and a stabilizing additive of chemical structure: wherein R, R, R, R, R, R, R, R, R, and Rare independently selected from hydrogen atom, hydrocarbon groups R having at least one and up to twelve carbon atoms, groups OR' wherein R&#x2032; is selected from hydrogen atom and hydrocarbon groups R, and halogen atoms, and wherein any two, three, or four of R, R, R, R, and Ror any two, three, or four of R, R, R, R, and Rare optionally interconnected to form a fused ring system; Rand Rare independently selected from hydrogen atom and hydrocarbon groups R; and r is either 0 or 1. Methods for coating and/or bonding metal substrates by use of the above-described solder compositions are also described.

Tin-based solder composition with low void characteristic

A method of testing the cleanability of polymerized sublimate outgassed from a lithography material during a thermal heating process including; placing a wafer on a wafer hotplate inside a chamber with the wafer being covered by a lithography material; placing a target, having a starting composition, above the wafer in the chamber; heating the wafer using the wafer hotplate in an attempt to outgas a sublimate, where the sublimate condenses on the target; forming a polymerized sublimate on the target; and applying organic solvents to the target to determine the cleanability of the polymerized sublimate.

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Poughquag, NY, United States of America

Qin Yuan