Infineon Technologies Austria Ag

Ulc Robotics, Inc.

Qin Lei

Mohamed Imam

Hyeongnam Kim

Alain Charles

Junjun Xin

Chunhui Liu

In an embodiment, a switching circuit is provided that includes a Group III nitride-based semiconductor body including a first monolithically integrated Group III nitride-based transistor device and a second monolithically integrated Group III nitride based transistor device that are coupled to form a half-bridge circuit and are arranged on a common foreign substrate having a common doping level. The switching circuit is configured to operate the half-bridge circuit at a voltage of at least 300 V.

Switching circuit, gate driver and method of operating a transistor device

An electromagnetic acoustic transducer (EMAT) system for inspecting a part includes an EMAT sensor and a power supply for supplying an output power to the EMAT sensor. The power supply includes a DC/DC converter to boost an input DC voltage into a boosted DC voltage, a DC/AC inverter having Silicon Carbide (SiC) Mosfet power switches to invert the boosted DC voltage into an AC square voltage, and an output filter to filter the AC square voltage into an AC sinusoidal voltage. The AC sinusoidal voltage is the output power from the power supply to the EMAT sensor.

Power supply for electromagnetic acoustic transducer (EMAT) sensors

Growing community of inventors

Chandler, AZ, United States of America

Qin Lei