Dow Global Technolgoies LLC

Shanghai Huali Integrated Circuit Corporation

Qin Deng

Aleksander Jozef Pyzik

Bin Li

Richard Allen Lundgard

Ted A Morgan

Given Jing Chen

Robert Alan Newman

Journey Lu Zhu

Lan Lu

Zhanyuan Hu

Huojin Tu

Jueyang Liu

Terry I Hu

Daniel R Lister

Hong Fei David Guo

Lu Journey Zhu

David Hongfei Guo

An epitaxial growth process for a semiconductor device includes providing a semiconductor substrate, forming a plurality of Dummy Gate structures on the surface of the semiconductor substrate, and forming grooves in a self-aligned manner on both sides of the Dummy Gate structures; forming an initial seed layer on the inner side surfaces of the grooves, the thickness of the formed initial seed layer on the bottoms of the grooves being greater and the thickness of the formed initial seed layer on the sidewalls being smaller since the growth speed of crystal faces &#x3c;100&#x3e; and &#x3c;110&#x3e; is different; longitudinally etching the initial seed layer to thin the bottom of the initial seed layer to form a seed layer; forming a main body layer on the seed layer, the main body layer filling the grooves; and forming a cover layer on the main body layer.

Epitaxial growth process for semiconductor device and semiconductor device comprising epitaxial layer formed by adopting the same

Halogen-free, thermoplastic polyurethane-based compositions having good mechanical and flame-retardant properties are provided. The compositions include flame-retardant aromatic organic phosphate compounds that do not exhibit migration in molded products, such as cable and wire jacketing and insulation. The compositions include a continuous resin phase comprising a thermoplastic polyurethane elastomer, at least one aromatic organic phosphate flame retardant having a melting point of at least 50.

Migration-free, halogen-free, flame retardant thermoplastic polyurethane compositions

In one embodiment, a composition () to be mixed with a molten metal to make a metal matrix composite, the composition characterized by: a ceramic reinforcing filler (), the ceramic reinforcing filler not being wettable by molten aluminum and/or not being chemically stable in molten aluminum, the ceramic reinforcing filler being coated with a ceramic material, the ceramic material being wettable by and chemically stable in molten aluminum. In a related embodiment, a composition () to make a porous preform to be infiltrated by molten metal to make a metal matrix composite, the composition characterized by: a ceramic reinforcing filler (), the ceramic reinforcing filler not being wettable by molten aluminum, the ceramic reinforcing filler being coated with a ceramic material () and optionally with a metal () such as nickel, the ceramic material being wettable by molten aluminum. The ceramic material can be coated on the ceramic reinforcing filler by a vacuum deposition technique such as vacuum sputtering.

Composition for making metal matrix composites

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Qin Deng