Huawei Technologies Co., Limited

Qimeng Jiang

Yushan Li

Hanxing Wang

Zhaozheng Hou

Boning Huang

Hui Sun

Xingqiang Peng

Chenghao Sun

Gaofei Tang

Qilong Bao

Zhibin Chen

An ESD protection circuit is provided, including a negative ESD protection module and a positive ESD protection module, where the negative ESD protection module includes a first resistor, a charging capacitor, a first field effect transistor, and a second field effect transistor, and the positive ESD protection module includes a fourth field effect transistor. When a negative ESD event occurs, there is a comparatively large transient voltage at a gate of a P-type enhanced GaN power device relative to a source of the P-type enhanced GaN power device. Therefore, a displacement current from the source to the gate of the P-type enhanced GaN power device is generated on the charging capacitor. A voltage drop generated by the displacement current on the first resistor may enable the first field effect transistor and the second field effect transistor to form a path when the first field effect transistor is turned on.

ESD protection circuit

This application provides a gallium nitride component and a drive circuit thereof. The gallium nitride component includes: a substrate; a gallium nitride (GaN) buffer layer formed on the substrate; an aluminum gallium nitride (AlGaN) barrier layer formed on the GaN buffer layer; and a source, a drain, and a gate formed on the AlGaN barrier layer. The gate includes a P-doped gallium nitride (P&#x2014;GaN) cap layer formed on the AlGaN barrier layer, and a first gate metal and a second gate metal formed on the P&#x2014;GaN cap layer. A Schottky contact is formed between the first gate metal and the P&#x2014;GaN cap layer, and an ohmic contact is formed between the second gate metal and the P&#x2014;GaN cap layer. In the technical solution provided in this application, the gallium nitride component is a normally-off component, and is conducive to design of a drive circuit.

Gallium nitride component and drive circuit thereof

This application discloses a chip and a signal level shifter circuit for use on a mobile terminal such as a charger or an adapter. The chip is co-packaged with a first silicon-based driver die and a second silicon-based driver die that are manufactured by using a BCD technology, and a first gallium nitride die and a second gallium nitride die that are manufactured by using a gallium nitride technology. A first silicon-based circuit is integrated on the first silicon-based driver die, a second silicon-based circuit is integrated on the second silicon-based driver die, and a high-voltage resistant gallium nitride circuit is integrated on the first gallium nitride die. In this way, it can be ensured that a second low-voltage silicon-based driver die manufactured by using a low-voltage BCD technology is not damaged by a high input voltage, thereby reducing costs of the chip.

Chip, signal level shifter circuit, and electronic device

Growing community of inventors

Shenzhen, China

Qimeng Jiang