Xiamen Changelight Co., Ltd.

Qilong Wu

Junxian Li

Yingce Liu

Zhiwei Lin

Kaixuan Chen

Zhendong Wei

Xingen Wu

Hongyi Zhou

Xiangjing Zhuo

Yang Wang

Xinmao Huang

Hexun Cai

Bin Song

Lihe Cai

Yongtong Li

Qimeng Lyu

Gengcheng Li

A flip-chip of light emitting diode includes at least one reflective layer, at least one N-type electrode, at least one P-type electrode, at least one distributed Bragg reflector, and an epitaxial unit. The epitaxial unit includes a substrate, an N-type layer, an active layer, and a P-type layer, wherein the substrate, the N-type layer, the active layer, and the P-type are sequentially stacked. The epitaxial unit has at least one N-type layer exposed portion, which is extended from the outer side surface of the P-type layer to the N-type layer via the active layer. The at least one reflective layer is formed on the P-type layer, wherein the at least one distributed Bragg reflector is integrally bonded to the N-type layer, the active layer, the P-type layer, and the at least one reflective layer. The at least one N-type electrode is electrically connected with the N-type layer and the at least one P-type electrode is electrically connected with the P-type layer.

Flip-chip of light emitting diode and manufacturing method and illuminating method thereof

A light-emitting diode (LED) chip () comprises a substrate (), an epitaxial structure (), a transparent conductive layer (), a passivation protective layer (), and at least one electrode (). The epitaxial structure () is disposed on the substrate (). The transparent conductive layer () is disposed on the epitaxial structure (). The transparent conductive layer () defines one or more first through holes () that extend through the transparent conductive layer (). The passivation protective layer () is disposed on the transparent conductive layer (). The passivation protective layer () defines one or more second through holes () that extend through the passivation protective layer (). The electrode () is disposed on the passivation protective layer (). The electrode () electrically connects the transparent conductive layer () through the one or more second through holes ().

Light-emitting diode chip and method of manufacturing the same

A LED chip includes a substrate, an N-type semiconductor layer, an active region, a P-type semiconductor layer, a transparent electric conductive layer, and a passivation protective layer stacked with each other in sequence. The passivation protective layer has a plurality holes corresponding to different positions of the transparent electric conductive layer respectively. A P-type electrode is electrically linked with the transparent electric conductive layer through said plurality of holes, while an N-type electrode is electrically linked with said N-type semiconductor layer.

Light emitting diode (LED) chip and manufacturing method and light emitting method thereof

A light-emitting diode (LED) device and a method of producing the same are provided. The LED device comprises a first conductive layer, a second conductive layer, an active layer sandwiched between the first conductive layer and the second conductive layer and a first electrode in electrical contact with the first conductive layer. The first conductive layer has a laminate structure comprising a first conductive sub-layer, a current blocking layer, and a second conductive sub-layer. The first electrode comprises a first extended electrode in electrical contact with the first conductive sub-layer, and a second extended electrode in electrical contact with the second conductive sub-layer. The first conductive sub-layer and the second conductive sub-layer may have different depths.

Light-emiting diode device and method of producing the same

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Xiamen, China

Qilong Wu