Nanyang Technological University

Qijie Wang

Guozhen Liang

Zheng Liu

Baile Zhang

Yi Dong Chong

Yongzhe Zhang

Xuechao Yu

Yongquan Zeng

Peng Yu

Udvas Chattopadhyay

Xiaonan Hu

Bo Meng

According to embodiments of the present invention, a laser source is provided. The laser source includes a photonic crystal structure including a first domain having a plurality of first holes defined therein, the first domain being associated with a first set of Chern numbers, and a second domain having a plurality of second holes defined therein, the second domain being associated with a second set of Chern numbers, wherein the plurality of first holes and the plurality of second holes are arranged to define an interface region between the first domain and the second domain, the interface region defining an optical cavity for lasing. According to further embodiments of the present invention, a method for forming a laser source is also provided.

Laser source and method for forming the same

According to embodiments of the present invention, an optical modulator is provided. The optical modulator includes a substrate, and a waveguiding arrangement on the substrate, the waveguiding arrangement having a waveguide, and at least one graphene layer arranged to interact with light propagating in the waveguiding arrangement, wherein the waveguide is designed such that the light interacting with the at least one graphene layer has a maximum intensity overlapping with the at least one graphene layer. According to further embodiments of the present invention, a method for forming the optical modulator, and a method for controlling the optical modulator are also provided.

Optical modulator, method for forming the same, and method for controlling the same

A chalcogenide film is provided. The chalcogenide film includes a noble metal chalcogenide material having a formula MC. M represents a noble metal. C represents a chalcogen. x is any one positive value equal to or more than 1.4 and less than 2. The chalcogenide film is configured to generate electrons and holes upon light incident on the chalcogenide film.

Chalcogenide film including a noble metal chalcogenide material, device including the chalcogenide film, and method of forming the chalcogenide film

Embodiments provide a light source having a coherent light generator arrangement configured to generate at least one output light, and a waveguide arrangement optically coupled to the coherent light generator arrangement, the waveguide arrangement including at least one first resonator element and at least one second resonator element arranged in different orientations, wherein the waveguide arrangement is configured to interact with the at least one output light to cause the at least one first resonator element and the at least one second resonator element to emit respective first and second optical signals to co-operatively interact with each other to generate an output optical signal, and wherein the light source is configured to change a polarization characteristic of the output optical signal in response to at least one electrical signal applied to the light source to vary at least one of respective magnitudes of the first and second optical signals relative to each other.

Light source and method for controlling the same

According to various embodiments, there is provided a layer arrangement including a graphene layer; a gating electrode layer configured to provide a tuning voltage to the graphene layer; a laser layer configured to provide an electromagnetic wave; and a concentric-circular grating layer configured to couple the electromagnetic wave to the graphene layer.

Laser and integrated graphene modulator

In various embodiments of the present disclosure, there is provided a method of manufacturing a monolayer graphene photodetector, the method including forming a graphene quantum dot array in a graphene monolayer, and forming an electron trapping center in the graphene quantum dot array. Accordingly, a monolayer graphene photodetector is also provided.

Growing community of inventors

Singapore, Singapore

Qijie Wang