Tokyo Electron Limited

Qiaowei Lou

Angelique Denise Raley

Toshio Hasegawa

Yoshihiro Kato

Choong-man Lee

Soo Doo Chae

Christopher Cole

A method for fabricating a semiconductor device is described that includes forming a base layer over a top layer of a substrate, the base layer includes a silicon based dielectric having a thickness less than or equal to 5 nm and greater than or equal to 0.5 nm; forming a photoresist layer over the base layer, the photoresist including a first side and an opposite second side; exposing a first portion of the photoresist layer to a pattern of extreme ultraviolet (EUV) radiation from the first side; exposing a second portion of the photoresist layer with a pattern of electron flux from the second side, the electron flux being directed into the photoresist layer from the base layer in response to the EUV radiation; developing the exposed photoresist layer to form a patterned photoresist layer; and transferring the pattern of the patterned photoresist layer to the base layer and the top layer.

Extreme ultraviolet lithography patterning method

A substrate processing method is described for etching silicon carbide films for resist underlayer applications. The method includes providing a substrate containing a silicon carbide film thereon, and a photoresist layer defining a pattern over the silicon carbide film, plasma-exciting an etching gas containing a fluorocarbon-containing gas and an oxygen-containing gas, and exposing the substrate to the plasma-excited etching gas to transfer the pattern to the silicon carbide film, where at least a portion of a thickness of the photoresist layer survives the exposing. For example, the photoresist layer includes an EUV resist layer and the etching gas includes CFgas, Ogas, and Ar gas. In another example, the exposing includes exposing the substrate to a) a plasma-excited etching gas containing CFgas, Ogas, and Ar gas, and b) exposing the substrate to a plasma-excited Ar gas, where steps a) and b) are sequentially performed at least once.

Method for dry etching silicon carbide films for resist underlayer applications

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Qiaowei Lou