United Microelectronics Corp.

Qianwei Ding

Xiaohong Jiang

Zhaoyao Zhan

Ching Hwa Tey

Ching-Hwa Tey

Jing Feng

An image sensor structure including a substrate, a nanowire structure, a first conductive line, a second conductive line, and a third conductive line is provided. The nanowire structure includes a first doped layer, a second doped layer, a third doped layer, and a fourth doped layer sequentially stacked on the substrate. The first doped layer and the third doped layer have a first conductive type. The second doped layer and the fourth doped layer have a second conductive type. The first conductive line is connected to a sidewall of the second doped layer. The second conductive line is connected to a sidewall of the third doped layer. The third conductive line is connected to the fourth doped layer.

Image sensor structure including nanowire structure and manufacturing method thereof

A photosensitive device is disclosed, including an integrated circuit structure, a first pad and a second pad exposed from a surface of the integrated circuit structure, a first material layer disposed on the surface of the integrated circuit structure and covering the first pad, and a second material layer disposed on the first material layer and covering the second pad. The first material layer and the second material layer form a heterojunction photodiode.

Photosensitive semiconductor device including heterojunction photodiode

A method for forming a photosensitive device includes the steps of providing an integrated circuit structure having a first pad and a second pad exposed from a surface of the integrated circuit structure, forming a first material layer on the surface of the integrated circuit structure, patterning the first material layer to expose the second pad, forming a second material layer on the first material layer and covering the second pad, and patterning the second material.

The invention provides an image sensor, the image sensor includes a substrate, a first circuit layer located on the substrate, and at least one nanowire photodiode located on the first circuit layer and electrically connected to the first circuit layer, the nanowire photodiode comprises a lower material layer and an upper material layer with a P-N junction between the lower material layer and the upper material layer, the lower material layer includes perovskite material.

Image sensor and manufacturing method thereof

A photosensitive device is disclosed, including an integrated circuit structure, a first pad and a second pad exposed from a surface of the integrated circuit structure, a first material layer disposed on the surface of the integrated circuit structure and covering the first pad, and a second material layer disposed on the first material layer and covering the second pad. The first material layer and the second material layer form a photodiode.

Photosensitive semiconductor device including top surface photodiode

A GAA transistor includes a semiconductor substrate. A first shallow trench isolation (STI) is embedded in the semiconductor substrate. A top surface of the first STI is lower than a top surface of the semiconductor substrate. A nanowire crosses the first STI and is disposed on the first STI. A gate structure contacts and wraps around the nanowire. A source electrode contacts a first end of the nanowire. A drain electrode contacts a second end of the nanowire.

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Singapore, Singapore

Qianwei Ding