Hewlett-packard Development Company, L.P.

Qiangfei Xia

Wei Guang Wu

Jianhua Yang

Alexandre M Bratkovski

Jing Tang

Shih-Yuan Wang

Jingjing Li

Zhiyong Li

Richard Stanley Williams

David A Fattal

Philip John Kuekes

Matthew D Pickett

Gilberto Medeiros Ribeiro

Xuema Li

An analyzer is disclosed herein. The analyzer encompasses a substrate having a surface with a plurality of distinct V-grooves formed therein. An input flow channel is configured to intersect and fluidly communicate with each of the plurality of distinct V-grooves at respective input points, and an output flow channel is configured to intersect and fluidly communicate with each of the plurality of distinct V-grooves at respective output points.

Analyzer and method for sensing using the same

Various embodiments of the present invention are directed to nanoscale electronic devices that provide nonvolatile memristive switching. In one aspect, a two-terminal device () comprises a first electrode (), a second electrode (), and an active region () disposed between the first electrode and the second electrode. The active region includes a mobile dopant (), and a fast drift ionic species (). The fast drift ionic species drifts into a diode-like electrode/active region interface temporarily increasing conductance across the interface when a write voltage is applied to the two-terminal device to switch the device conductance.

Switchable two-terminal devices with diffusion/drift species

Embodiments of the present invention are directed to systems for performing surface-enhanced Raman spectroscopy. In one embodiment, a system for performing Raman spectroscopy includes a waveguide layer configured with at least one array of features, and a material disposed on at least a portion of the features. Each array of features and the waveguide layer are configured to provide guided-mode resonance for at least one wavelength of electromagnetic radiation. The electromagnetic radiation produces enhanced Raman scattered light from analyte molecules located on or in proximity to the material.

Waveguides configured with arrays of features for performing Raman spectroscopy

A memristive device includes a first electrode, a second electrode crossing the first electrode at a non-zero angle, and an active region disposed between the first and second electrodes. The active region has a controlled defect profile throughout its thickness.

Memristive device

An electrical circuit component includes a first electrode, a plurality of second electrodes and a negative differential resistance (NDR) material. The first electrode and the plurality of second electrodes are connected to the NDR material and the NDR material is to electrically connect the first electrode to one of the plurality of second electrodes when a sufficient voltage is applied between the first electrode and the one of the plurality of second electrodes through the NDR material.

Electrical circuit component

A memristor having an active region includes a first electrode. The first electrode comprises a nanostructure formed of at least one metallic single walled nanotube. The memristor also includes a second electrode formed of at least one metallic single walled nanotube. The second electrode is positioned in a crossed relationship with respect to the first electrode. The memristor further includes a switching material positioned between the first electrode and the second electrode, in which the active region is configured to form in the switching material at a cross point of the first electrode and the second electrode.

Memristor with nanostructure electrodes

A method for forming three-dimensional multilayer circuit includes forming an area distributed CMOS layer configured to selectively address a set of first vias and a set of second vias. A template is then aligned with the first set of vias and lower crossbar segments are created using the template. The template is then removed, rotated, and aligned with the set of second vias. Upper crossbar segments which attach to the second set of vias are then created.

Three dimensional multilayer circuit

A system for performing Raman spectroscopy comprises a waveguide layer configured with at least one array of features, the at least one array of features being configured to provide guided-mode resonance for at least one wavelength of electromagnetic radiation; and at least one fluid channel disposed in the waveguide layer. An analyte sensor comprises an electromagnetic radiation source configured to emit a range of wavelengths of electromagnetic radiation, the system for performing Raman spectroscopy, and at least one photodetector configured to detect Raman scattered light.

Guided mode resonator based Raman enhancement apparatus

A nanoscale three-terminal switching device has a bottom electrode, a top electrode, and a side electrode, each of which may be a nanowire. The top electrode extends at an angle with respect to the bottom electrode and has an end section going over and overlapping the bottom electrode. An active region is disposed between the top electrode and bottom electrode and contains a switching material. The side electrode is disposed opposite from the top electrode and in electrical contact with the active region. A self-aligned fabrication process may be used to automatically align the formation of the top and side electrodes with respect to the bottom electrode.

Nanoscale three-terminal switching device

A memristor includes a first electrode having a first surface, at least one electrically conductive nanostructure provided on the first surface, in which the at least one electrically conductive nanostructure is relatively smaller than a width of the first electrode, a switching material positioned upon said first surface, in which the switching material covers the at least one electrically conductive nanostructure, and a second electrode positioned upon the switching material substantially in line with the at least one electrically conductive nanostructure, in which an active region in the switching material is formed substantially between the at least one electrically conductive nanostructure and the first electrode.

Memristor having a nanostructure in the switching material

An optical device for surface enhanced Raman spectroscopy includes a substrate, and at least one antenna established thereon. The at least one antenna including at least two segments, where each segment is formed of a metal having a predetermined volume and a predetermined contact angle with respect to the substrate. A gap is located between the two segments. The gap has a controllable size such that the at least one antenna resonates at a predetermined frequency that corresponds with the gap.

Optical devices for surface enhanced Raman spectroscopy

A structure for surface enhanced Raman spectroscopy is disclosed herein. The structure is made up of a substrate, a self-assembled layer of first metal particles established on the substrate, and a self-assembled layer of second metal particles established such that the second metal particles are positioned at interstitial spaces between the first metal particles. The first metal particles have a first predetermined diameter, and the second metal particles have a second predetermined diameter that is smaller than the first predetermined diameter.

Structure for surface enhanced Raman spectroscopy

Various embodiments of the present invention are directed to external, electronically controllable, negative index material-based modulators. In one aspect, an external modulator comprises a negative index material in electronic communication with an electronic signal source. The negative index material receives an electronic signal encoding data from the electronic signal source and an unmodulated carrier wave from an electromagnetic radiation source. Magnitude variations in the electronic signal produce corresponding effective refractive index changes in the negative index material encoding the data in the amplitude and/or phase of the carrier wave to produce an electromagnetic signal.

Negative index material-based modulators and methods for fabricating the same

A memristive device having a bimetallic electrode includes a memristive matrix, a first electrode and a second electrode. The first electrode is in electrical contact with the memristive matrix and the second electrode is in electrical contact with the memristive matrix and an underlying layer. At least one of the first and second electrodes is a bimetallic electrode which includes a conducting layer and a metallic layer.

Memristive device with a bi-metallic electrode

A nanoscale switching device comprises at least two electrodes, each of a nanoscale width; and an active region disposed between and in electrical contact with the electrodes, the active region containing a switching material capable of carrying a species of dopants and transporting the dopants under an electrical field, wherein at least one of the electrodes comprises an amorphous conductive material.

Growing community of inventors

Palo Alto, CA, United States of America

Qiangfei Xia