Semiconductor Manufacturing International (shanghai) Corporation

Harman International Industries, Inc.

Harman Becker Automotive Systems Gmbh

Pan Asia Technical Automotive Center Company Limited

Saic General Motors Corporation Limited

Qiang Zhou

Herb He Huang

Lei Wang

Haiting Li

Weijia Lu

Zhongfeng Pan

Tao Li

Yan Hao

Hongtao Ge

Junqiao Peng

Guangjun Qin

Mu Qian

Chong Liu

Qingfeng Xia

Zhankui He

Shangpeng Li

The present disclosure provides a power filter. The power filter may include an overvoltage protection circuit and an LC filter circuit connected to the overvoltage protection circuit, wherein the overvoltage protection circuit includes a voltage regulator and a peak compensation circuit. The peak compensation circuit is configured to generate a gain peak at a resonance frequency of the LC filter circuit, so as to compensate for a gain dip at the voltage regulator stage occurring at the resonance frequency of the LC filter circuit.

Power filter

The present disclosure provides an audio system. The audio system includes: a target audio signal generator module including a plurality of target audio signal generators, configured to receive an audio signal and a tracking signal and generate a plurality of target audio signals based on the audio signal and tracking signal; a tracking power supply circuit module including a plurality of tracking power supply circuits, configured to receive the plurality of target audio signals and generate a plurality of power supply voltages based on the plurality of target audio signals; an audio power amplifying circuit module including a plurality of audio amplifying circuits, configured to receive the plurality of target audio signals and the plurality of power supply voltages, and amplify the plurality of target audio signals; wherein each of the plurality of tracking power supply circuits provides a corresponding power supply voltage for each of the plurality of audio amplifying circuits.

Audio system

The present invention discloses a method and system for unlocking vehicle engine cover. Method comprising: acquiring an action signal transmitted from an action sensor, and executing an action signal judging step; executing an unlocking step if the received action signal matches a preset unlock action signal, otherwise not executing the unlocking step, the unlock action signal is a combination of a signal or a plurality of consecutive signals; unlocking step: sending an unlock signal to an engine cover lock, wherein the unlock signal is used to control the engine cover lock to perform an unlock operation on a vehicle engine cover. The present invention detects an action signal from an action sensor, and controls whether or not to unlock the vehicle engine cover by matching the action signal with a preset unlock action signal. So users do not need to enter into the passenger compartment for unlocking. The operation is both convenient and rich sense of technology.

Method and system for unlocking vehicle engine cover

A transistor device includes a semiconductor substrate having a first surface and a second surface opposite the first surface, a gate structure disposed on the first surface and configured to form a channel region, and source and drain regions disposed on opposite sides of the channel region. The device also includes a source terminal and a drain terminal disposed on the second surface. The source and drain terminals are connected to the respective source and drain regions. The transistor device further include a body terminal disposed on the second surface and configured to connect the highest or lowest voltage supply to the semiconductor substrate.

CMOS device with double-sided terminals and method of making the same

A semiconductor device and method of fabricating the semiconductor device are provided. The semiconductor device includes a first substrate including a front-end device containing a transistor, a radio frequency (RF) device and a first interconnect structure, and a second substrate containing a cavity disposed at a location corresponding to a location of the RF device. The first substrate and the second substrate are bonded together such that the first surface of the first substrate is facing the cavity in the second substrate, and the cavity is over the RF device. Because of the cavity, the distance between the second substrate and the RF device is relatively large so that the second substrate has less impact on the performance of the RF device, thereby improving the performance of the semiconductor device.

Device and method for improving RF performance

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Shanghai, China

Qiang Zhou