Chongqing University

China Electronics Technology Group Corporation No. 26 Research Institute

Qiang Wang

Jie Zhang

Jian Li

Yuchong Ding

Feipeng Wang

Weigen Chen

Yushuang He

Jingjing Qu

Zhengyong Huang

Xiao Zhang

Lu Wang

A method and a system for initial self-healing type classification of metallized film capacitors, which relate to the technical field of high-voltage capacitors. The method comprises: applying voltages at different voltage ramp rates to metallized film capacitors to be tested, and determining a voltage bearing range of the metallized film capacitors; determining, according to a corresponding voltage of the metallized film capacitors when initial self-healing occurs and a residual voltage after the initial self-healing occurs, corresponding initial self-healing energy of metallized film capacitors when the initial self-healing occurs; establishing an initial self-healing voltage-energy database according to an initial self-healing voltage of the samples when the initial self-healing occurs and the corresponding initial self-healing energy when the initial self-healing occurs; and classifying the metallized film capacitors by combining an initial self-healing recovery condition and the subsequent service life and performance data of the metallized film capacitors.

Method and system for initial self-healing type classification of metallized film capacitors

The present disclosure provides a method for increasing luminescence uniformity and reducing afterglow of a Ce-doped gadolinium-aluminum-gallium garnet structure scintillation crystal, a crystal material and a detector. Sc ions are doped into the crystal material, and the Sc ions occupy at least an octahedral site. The effective segregation coefficient of active Ce ions is increased by a radius compensation effect of Sc—Ce ions and adjustment of lattice parameters, thereby the luminescence uniformity of the crystal is increased and the energy resolution is optimized; and at the same time, the potential barrier for Gd ions entering the octahedral site is increased, thereby the probability of the Gd ions entering the octahedral site is reduced, the density of point defects in the crystal is decreased, and the afterglow intensity is reduced. A general formula of the Ce-doped gadolinium-aluminum-gallium garnet structure scintillation crystal is {GdScCeMe}[Al]O, 0<x≤0.1, 0<y<0.02, 0≤p≤0.02, 0.4≤q≤0.7.

Method for increasing luminescence uniformity and reducing afterglow of Ce-doped gadolinium-aluminum-gallium garnet structure scintillation crystal, crystal material and detector

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Chongqing, China

Qiang Wang