Hkc Corporation Limited

Bizconn International Corp.

Qiang Leng

Rongrong Li

Feng Jiang

Yizhen Xu

Liu He

Keming Yang

Hong-Guang Kuang

Jia-Mao Zheng

Chunhui Ren

Junlin Wang

Disclosed are a thin film transistor structure, a display panel and a display device. The thin film transistor structure includes a base, a source electrode, a drain electrode configured to connect to a pixel electrode and a grid electrode. The source electrode, the drain electrode and the grid electrode are provided on the base. and a channel is formed between the source electrode and the drain electrode. The thin film transistor structure further includes an insulating layer and a slow-release electrode. The insulating layer is provided on a side of the source electrode and the drain electrode, and filled in the channel. The slow-release electrode is provided in the insulating layer. At least a part of the slow-release electrode is provided inside the channel.

Thin film transistor structure, display panel and display device

A Liquid Crystal Display (LCD) assembly and an electronic device is provided in the disclosure. The LCD assembly includes a liquid crystal panel, a resistance detection unit, and a color-temperature-compensation unit. The liquid crystal panel has a first detection point in a first region and a second detection point in a second region. The resistance detection unit is configured to obtain a first resistance value by detecting a resistance value at the first detection point and obtain a second resistance value by detecting a resistance value at the second detection point, and further configured to obtain a resistance difference by calculating a difference between the second resistance value and the first resistance value. The color-temperature-compensation unit is configured to receive the resistance difference, and determine whether Mura appears in a region corresponding to the first detection point in the first region according to the resistance difference.

Liquid crystal display assembly and electronic device

Provided is a large current female connector for high-speed transmission, comprising a case, an insulating body, and an upper terminal group and a lower terminal group disposed in the insulating body. The insulating body is disposed in the case. A power terminal in the upper terminal group and a corresponding power terminal in the lower terminal group are connected to form a big power terminal. An insulating body trench for accommodating the big power terminal is disposed on the insulating body. The present invention has advantages in that the fabrication process is simple and cost effective, and a large current transport is possible.

Large current female connector for high-speed transmission

Provided is a female connector for high-speed transmission with grounding, including a case, an insulating body, and an upper terminal group and a lower terminal group disposed in the insulating body. The insulating body is disposed in the case. A shielding sheet is disposed in the insulating body. A contact part directly processed from the shielding sheet is disposed on a portion of the shielding sheet, wherein the portion corresponds to the ground terminals of the upper terminal group and the lower terminal group. The contact part is physically and electrically connected to the ground terminals. The upper terminal group and/or the lower terminal group at least includes a high frequency terminal pair, wherein the thickness of a contact portion of the high frequency terminal pair is less than the thickness of a portion adjacent to the contact portion.

Female connector for high-speed transmission with grounding

Growing community of inventors

Guangdong, China

Qiang Leng