International Business Machines Corporation

Globalfoundries Inc.

Nexcis

Qiang Huang

Hariklia Deligianni

Lubomyr Taras Romankiw

Kenneth Parker Rodbell

Satyavolu S Papa Rao

Kathryn C Fisher

Cyril Cabral, Jr

Brett Caroline Baker-O'Neal

Harold John Hovel

Asli Sahin

Susan Huang

Paul Stephen Andry

David Lee Rath

Xiaoyan Shao

Yu Luo

Young-Hee Kim

Shafaat Ahmed

Adinath S Narasgond

Raman Vaidyanathan

Devendra K Sadana

Jeffrey P Gambino

Stephen W Bedell

Guy M Cohen

Michael S Gordon

Takeshi Nogami

Katherine Lynn Saenger

John Michael Cotte

Fuad Elias Doany

Thomas M Shaw

Xiao Hu Liu

George Frederick Walker

Jeffrey Curtis Hedrick

Gregory M Fritz

Eric Peter Lewandowski

Mary Beth Rothwell

John Patrick Hummel

Laura Louise Kosbar

Ronald Dean Goldblatt

James Vichiconti

Roland Yudadibrata Utama

Shu-Yun Chong

Rob Steeman

Andrew John Kellock

Venkatram Venkatasamy

Jun Liu

Pierre-Philippe Grand

Kathleen B Reuter

Salvador Jaime

Ming-Ling Yeh

Philippe De Gasquet

Brett Caroline Baker

Cyril Cabral Jr

In one aspect, a method for use in preparing a glass includes performing an ion exchange process by treating the glass with a eutectic mixture including at least a first rubidium salt. In another aspect, a glass is prepared at least in part by performing an ion exchange process by treating the glass with a eutectic mixture including at least a first rubidium salt.

Chemically strengthened glass and methods of making same

Embodiments include methods and products for evaluating microbatteries. The microbattery includes a cathode layer, an anode layer physically separated from the cathode layer, and an electrolyte layer in contact with the anode and the cathode. The microbattery also includes at least one auxiliary electrode in physical contact with the electrolyte layer, the auxiliary electrode containing at least one metal coating and at least one non-conductive film, wherein the at least one metal coating is physically separated from the cathode and the anode.

Micro battery design and diagnosis

A photovoltaic device, such as a solar cell, including a copper-containing-grid metallization structure that contains a metal phosphorus layer as a diffusion barrier is provided. The copper-containing-grid metallization structure includes, from bottom to top, an electroplated metal phosphorus layer that does not include copper or a copper alloy located within a grid pattern formed on a front side surface of a semiconductor substrate, and an electroplated copper-containing layer. A method of forming such a structure is also provided.

Use of metal phosphorus in metallization of photovoltaic devices and method of fabricating same

Photovoltaic devices are formed by laser drilling vias through silicon substrates and, following surface preparation of the via sidewalls, plating a continuous, electrically conductive layer on the via sidewalls to electrically connect the emitter side of the cell with the back side of the cell. The electrically conductive layer can be formed on portions of a base emitter within the vias and on the back side of the substrate. Alternatively, the electrically conductive layer can be formed on a passivation layer on the via sidewalls and back side of the cell.

Method for fabricating a photovoltaic device by uniform plating on dielectric passivated through-wafer vias and interconnects

A photovoltaic device is provided that includes a semiconductor substrate including a p-n junction with a p-type semiconductor portion and an n-type semiconductor portion one lying on top of the other, wherein an upper exposed surface of the semiconductor substrate represents a front side surface of the semiconductor substrate. A plurality of patterned antireflective coatings is located on the front side surface to provide a grid pattern including a busbar region and finger regions. The busbar region includes at least a real line interposed between at least two dummy lines. A material stack including at least one metal layer located on the semiconductor substrate in the busbar region and the finger regions.

Processes for uniform metal semiconductor alloy formation for front side contact metallization and photovoltaic device formed therefrom

In one aspect, a method for use in preparing a glass comprises: performing a first ion exchange process to replace at least a first ion in the glass with at least a second ion, the second ion being smaller than the first ion; and performing a second ion exchange process to replace at least the second ion in the glass with at least a third ion, the third ion being larger than the first ion. In another aspect, a glass is prepared at least in part by: performing a first ion exchange process to replace at least a first ion in the glass with at least a second ion, the second ion being smaller than the first ion; and performing a second ion exchange process to replace at least the second ion in the glass with at least a third ion, the third ion being larger than the first ion.

A method of manufacturing a glass substrate to control the fragmentation characteristics by etching and filling trenches in the glass substrate is disclosed. An etching pattern may be determined. The etching pattern may outline where trenches will be etched into a surface of the glass substrate. The etching pattern may be configured so that the glass substrate, when fractured, has a smaller fragmentation size than chemically strengthened glass that has not been etched. A mask may be created in accordance with the etching pattern, and the mask may be applied to a surface of the glass substrate. The surface of the glass substrate may then be etched to create trenches. A filler material may be deposited into the trenches.

Controlling fragmentation of chemically strengthened glass

Method for fabricating a photovoltaic device by uniform plating on emitter-lined through-wafer vias and interconnects

The invention relates to manufacturing a I-III-VI compound in the form of a thin film for use in photovoltaics, including the steps of: a) electrodepositing a thin-film structure, consisting of I and/or III elements, onto the surface of an electrode that forms a substrate (SUB); and b) incorporating at least one VI element into the structure so as to obtain the I-III-VI compound. According to the invention, the electrodeposition step comprises checking that the uniformity of the thickness of the thin film varies by no more than 3% over the entire surface of the substrate receiving the deposition.

Checking the stoichiometry of I-III-VI layers for use in photovoltaic using improved electrolysis conditions

A method of forming a photovoltaic device is provided that includes a p-n junction with a p-type semiconductor portion and an n-type semiconductor portion, wherein an upper exposed surface of one of the semiconductor portions represents a front side surface of the semiconductor substrate. Patterned antireflective coating layers are formed on the front side surface of the semiconductor surface to provide a grid pattern including a busbar region and finger region. A mask having a shape that mimics each patterned antireflective coating layer is provided atop each patterned antireflective coating layer. A metal layer is electrodeposited on the busbar region and the finger regions. After removing the mask, an anneal is performed that reacts metal atoms from the metal layer react with semiconductor atoms from the busbar region and the finger regions forming a metal semiconductor alloy.

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Sleepy Hollow, NY, United States of America

Qiang Huang