Future Wei Technologies, Inc.

Cisco Technology, Inc.

Huawei Technologies Co., Limited

Qianfan Xu

Xiao Andy Shen

Dawei Zheng

Li Ping Yang

Hongmin Chen

Yu Sheng Bai

Hongbing Lei

Zongrong Liu

Rongsheng Miao

YuSheng Bai

Huapu Pan

Feng Zhang

Jonathan Edgar Roth

Liang Gu

Gong Tom Lei

Yuming Cao

Yen Dang

Yifan Gu

Hongzhen Wei

Hungyi Lee

Morgan Chen

Long Chen

Tiangong Liu

Eric Dudley

Gong Lei

Li Yang

A receiver comprises at least two input ports. An optical signal containing n wavelengths is coupleable to one of these input ports. The receiver comprises a first demultiplexer coupled to a first input port to separate n wavelengths in the first input port onto n first multiplexer output ports, a second demultiplexer coupled to a second input port to separate the n wavelengths in the second input port onto n second multiplexer output ports, and a waveguide crossing matrix comprising an input side and an output side. The crossing matrix coupled to the n first and the n second multiplexer output ports on the input side and coupled to n shared photodetectors on the output side, one for each wavelength channel. Each of the photodetectors is coupled to one of the n first multiplexer output ports and one of the n second multiplexer output ports for the one wavelength channel.

Fabrication tolerant wavelength demultiplexer receiver

An all-optical network comprises: a first network; a second network; and a PWXC coupling the first network to the second network and comprising passive optical components. A method comprises: receiving a first optical signal from a first tail node of a first network; directing the first optical signal from a first input port of a PWXC to a first output port of the PWXC using first passive optical components; and transmitting the first optical signal to a third head node of a third network. An all-optical network comprising: a light bank; a first network coupled to the light bank; a second network coupled to the light bank; and a first PWXC coupling the first network and the second network.

All-optical networks based on switchable wavelength connects (SWCs)

A free space coupling system comprising a waveguide horizontally positioned on an integrated circuit, and a silicon housing coupled to the waveguide, wherein the silicon housing comprises a reflective surface, a first port, wherein the first port is configured to receive light from an optic source positioned substantially parallel to the waveguide at a coupling point, and a second port, wherein the second port is oriented at about ninety degrees with respect to the first port, and wherein the second port is aligned with a grating port on the waveguide.

Free space grating coupler

An optical modulator comprises a silicon substrate, a buried oxide (BOX) layer disposed on top of the silicon substrate, and a ridge waveguide disposed on top of the BOX layer and comprising a first n-type silicon (n-Si) slab, a first gate oxide layer coupled to the first n-Si slab, a first p-type silicon (p-Si) slab coupled to the first gate oxide layer, and a light propagation path that travels sequentially through the first n-Si slab, the first gate oxide layer, and the first p-Si slab.

Interdigitated optical modulator

A dense wavelength-division multiplexing (DWDM) optical network includes an optical input port configured to receive unmodulated optical signals from the optical fiber comprising wavelength channels; one or more modulators coupled to the optical input port wherein the one or more modulators are each configured to modulate a respective first wavelength channel of the wavelength channels with respective data to produce a modulated first wavelength channel when the modulator is in a transmit state; wherein an input optical power of each modulator is kept at substantially a first level and an output optical power of the each modulator is kept at substantially a second level during operation of the modulator. A method and an optical network node are also disclosed therein.

Dense wavelength-division multiplexing (DWDM) network and method

A metal-oxide semiconductor (MOS) optical modulator including a doped semiconductor layer having a waveguide structure, a dielectric layer disposed over the waveguide structure of the doped semiconductor layer, a gate region disposed over the dielectric layer, wherein the gate region comprises a transparent electrically conductive material having a refractive index lower than that of silicon, and a metal contact disposed over the gate region. The metal contact, the gate region, and the waveguide structure of the doped semiconductor layer may be vertically aligned with each other.

MOS capacitor optical modulator with transparent conductive and low-refractive-index gate

An apparatus comprises a substrate comprising a silicon dioxide (SiO) material disposed on top of the substrate, a silicon waveguide comprising a first adiabatic tapering and enclosed in the silicon dioxide material, and a low-index waveguide disposed on top of the substrate and adjacent to the first adiabatic tapering. A mode converter fabrication method comprises obtaining a mode converter comprising a substrate, a silicon waveguide disposed on the substrate and comprising a sidewall and a first adiabatic tapering, and a hard mask disposed on the silicon waveguide and comprising a silicon dioxide layer, wherein the hard mask does not cover the sidewall, and oxidizing the silicon waveguide and the hard mask, wherein oxidizing the silicon waveguide and the hard mask encloses the silicon waveguide within the silicon dioxide layer.

Inverse taper waveguides for low-loss mode converters

A method for fabricating a photonic integrated circuit (PIC) comprises providing a wafer comprising an insulator layer positioned between a top semiconductor layer and a base semiconductor layer, patterning the top semiconductor layer to simultaneously define a waveguide and a first etch mask window for forming a fiber-guiding v-groove that substantially aligns to an axis of optical signal propagation of the waveguide, removing a first portion of the top semiconductor layer to form the waveguide according to the patterning, removing a second portion of the top semiconductor layer to form the first etch mask window according to the patterning, and forming the fiber-guiding v-groove according to the first etch mask window.

Integration of V-grooves on silicon-on-insulator (SOI) platform for direct fiber coupling

An apparatus comprising a first electrical driver configured to generate a first binary voltage signal according to first data, a second electrical driver configured to generate a second binary voltage signal according to second data, wherein the first data and the second data are different, and a first optical waveguide arm coupled to the first electrical driver and the second electrical driver, wherein the first optical waveguide arm is configured to shift a first phase of a first optical signal propagating along the first optical waveguide arm according to a first voltage difference between the first binary voltage signal and the second binary voltage signal to produce a first multi-level phase-shifted optical signal.

Digital generation of multi-level phase shifting with a Mach-Zehnder modulator (MZM)

A metal-oxide-semiconductor (MOS) type semiconductor device, comprising a silicon substrate, a first cathode electrode and a second cathode electrode coupled to the silicon substrate and located on distal ends of the silicon substrate, a poly-silicon (Poly-Si) gate proximally located above the silicon substrate and between the first cathode electrode and the second cathode electrode, wherein the Poly-Si gate comprises a first post extending orthogonally relative to the silicon substrate comprising a first doped silicon slab, a second post extending orthogonally relative to the silicon substrate comprising a second doped silicon slab, wherein the second post is positioned so as to create a width between the first post and the second post, an anode electrode coupled to the first post and the second post and extending laterally from the first post to the second post, and a dielectric layer disposed between the first silicon substrate and the second silicon substrate.

Patterned poly silicon structure as top electric contact to MOS-type optical modulators

An apparatus comprises a substrate comprising a silicon dioxide (SiO2) material disposed on top of the substrate, a silicon waveguide comprising a first adiabatic tapering and enclosed in the silicon dioxide material, and a low-index waveguide disposed on top of the substrate and adjacent to the first adiabatic tapering. A mode converter fabrication method comprises obtaining a mode converter comprising a substrate, a silicon waveguide disposed on the substrate and comprising a sidewall and a first adiabatic tapering, and a hard mask disposed on the silicon waveguide and comprising a silicon dioxide (SiO2) layer, wherein the hard mask does not cover the sidewall, and oxidizing the silicon waveguide and the hard mask, wherein oxidizing the silicon waveguide and the hard mask encloses the silicon waveguide within the silicon dioxide layer.

A silicon waveguide comprising a waveguide core that comprises a first positively doped (P1) region vertically adjacent to a second positively doped (P2) region. The P2 region is more heavily positively doped than the P1 region. A first negatively doped (N1) region is vertically adjacent to a second negatively doped (N2) region. The N2 region is more heavily negatively doped than the N1 region. The N2 region and the P2 region are positioned vertically adjacent to form a positive-negative (PN) junction. The N1 region, the N2 region, the P1 region, and the P2 region are positioned as a vertical PN junction and configured to completely deplete the P2 region of positive ions and completely deplete the N2 region of negative ions when a voltage drop is applied across the N1 region, the N2 region, the P1 region, and the P2 region.

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San Jose, CA, United States of America

Qianfan Xu