Yangtze Memory Technologies Co., Ltd.

Qianbin Xu

Enbo Wang

Haohao Yang

Yong Zhang

Jialan He

Li Hong Xiao

Ruo Fang Zhang

Fushan Zhang

Feng Lu

Shasha Liu

Embodiments of 3D memory devices having an inter-deck plug and methods for forming the same are disclosed. In an example, a 3D memory device includes a substrate, a first memory deck including interleaved conductor and dielectric layers above the substrate, a second memory deck including interleaved conductor and dielectric layers above the first memory deck, and a first and a second channel structure each extending vertically through the first or second memory deck. The first channel structure includes a first memory film and semiconductor channel along a sidewall of the first channel structure, and an inter-deck plug in an upper portion of the first channel structure and in contact with the first semiconductor channel. A lateral surface of the inter-deck plug is smooth. The second channel structure includes a second memory film and semiconductor channel along a sidewall of the second channel structure. The second semiconductor channel is in contact with the inter-deck plug.

Inter-deck plug in three-dimensional memory device and method for forming the same

Embodiments of 3D memory devices with a semiconductor plug protected by a dielectric layer and methods for forming the same are disclosed. In an example, a 3D memory device includes a substrate, a memory stack including a plurality of interleaved conductor layers and dielectric layers on the substrate, and a memory string extending vertically through the memory stack. The memory string includes a semiconductor plug in a lower portion of the memory string, a protective dielectric layer on the semiconductor plug, and a memory film above the protective dielectric layer and along a sidewall of the memory string.

Semiconductor plug protected by protective dielectric layer in three-dimensional memory device and method for forming the same

Embodiments of 3D memory devices and methods for forming the same are disclosed. In an example, a 3D memory device includes a memory stack including interleaved conductive layers and dielectric layers, a channel structure extending vertically through the memory stack, and a semiconductor layer above the memory stack. The channel structure includes a channel plug in a lower portion of the channel structure, a memory film along a sidewall of the channel structure, and a semiconductor channel over the memory film and in contact with the channel plug. The semiconductor layer includes a semiconductor plug above and in contact with the semiconductor channel.

Three-dimensional memory device having semiconductor plug formed using backside substrate thinning

Growing community of inventors

Wuhan, China

Qianbin Xu