Alpha Power Solutions Limited

Qian Sun

Wai Tien Chan

Ho Nam Lee

Wing Kit Cheung

Wing Chong Tony Chau

One embodiment provides a semiconductor device. The device comprises a substrate having a first face and a second face, a well region, a source region disposed in the well region, a contact region contacting the well region and the source region, a Schottky region, and a source metal layer. A first part of the source metal layer contacts the Schottky region to form a Schottky diode. The Schottky region is surrounded by the contact region and the well region in a first plane perpendicular to a direction from the first face toward the second face.

Semiconductor device with embedded Schottky diode and manufacturing method thereof

A semiconductor device includes a device cell including a gate component configured to receive a gate control signal and a temperature sensing component adjacent to the device cell. Each of the temperature sensing component and the gate component includes polycrystalline silicon.

Growing community of inventors

Hong Kong, China

Qian Sun