Mattson Technology, Inc

Beijing E-town Semiconductor Technology, Co., Ltd

Palo Alto Networks, Inc.

Qi Zhang

Hua Chung

Xinliang Lu

Jiangxia Liu

Michael Xiaoxuan Yang

Haichun Yang

Ting Xie

Bin Zhao

Haochen Li

Chun Yan

Shengming Xu

Yanhui Jia

Tsai Wen Sung

Shanyu Wang

Techniques for beacon and threat intelligence based Advanced Persistent Threat (APT) detection are disclosed. In some embodiments, a system/process/computer program product for beacon and threat intelligence based APT detection includes collecting firewall log data from monitored network traffic; analyzing the firewall log data at a cloud security service to identify beacon traffic based on a plurality of heuristics; performing a risk evaluation of the beacon traffic to detect malicious beacon traffic; and performing an action in response to detecting the malicious beacon traffic.

Beacon and threat intelligence based APT detection

A client device requests a web page via a clientless VPN. In response to the request, web page content comprising at least one script element is received at the clientless VPN. The clientless VPN inserts a wrapper function around at least a portion of the script element, forming modified web content. The client device is provided with the modified web content.

Encoding-free JavaScript stringify for clientless VPN

Systems and methods for etching titanium containing layers on a workpiece are provided. In one example, a method includes placing the workpiece on a workpiece support in a processing chamber. The workpiece includes a first layer and a second layer. The first layer is a titanium containing layer. The method includes admitting a process gas into the processing chamber. The process gas includes an ozone gas and a fluorine containing gas. The method includes exposing the first layer and the second layer on the workpiece to the process gas to at least partially etch the first layer at a greater etch rate relative to the second layer.

Selective etch process using hydrofluoric acid and ozone gases

A native web storage function call is received at a client device. A modified browser storage function call is executed, to facilitate browser storage associated with a clientless VPN. The modified browser storage function call executes a call to the native browser storage function call to facilitate access to the browser storage.

Browser storage for clientless VPN

Content obtained from a remote server by a clientless VPN is received in response to a request made by a client browser executing on a client device. The content includes a script and is received at the client device. A determination is made by the client device that the obtained content includes a script that invokes a native accessor function call. Functionality provided by the script is preserved, at least in part, by the client device executing a modified accessor function call.

Object property getter and setter for clientless VPN

Processes for surface treatment of a workpiece are provided. In one example implementation, a method can include conducting a pre-treatment process on a processing chamber to generate a hydrogen radical affecting layer on a surface of the processing chamber prior to performing a hydrogen radical based surface treatment process on a workpiece in the processing chamber. In this manner, a pretreatment process can be conducted to condition a processing chamber to increase uniformity of hydrogen radical exposure to a workpiece.

Chamber seasoning to improve etch uniformity by reducing chemistry

Encoding-free javascript stringify for clientless VPN

Apparatus, systems, and methods for conducting an etch removal process on a workpiece are provided. The method can include generating a plasma from a deposition process gas in a plasma chamber using a plasma source to deposit a passivation layer on certain layers of a high aspect ratio structure. The method can include generating a plasma from an etch process gas in a plasma chamber using a plasma source to remove certain layers from the high aspect ratio structure. The method can include removing silicon nitride layers at a faster etch rate than silicon dioxide layers on the high aspect ratio structure.

Processing of workpieces using deposition process and etch process

Methods for processing a workpiece are provided. The workpiece can include a ruthenium layer and a copper layer. In one example implementation, a method for processing a workpiece can include supporting a workpiece on a workpiece support. The method can include performing an ozone etch process on the workpiece to at least a portion of the ruthenium layer. The method can also include performing a hydrogen radical treatment process on a workpiece to remove at least a portion of an oxide layer on the copper layer.

Processing of workpieces using ozone gas and hydrogen radicals

A modified accessor function call is provided to the client device by a clientless VPN in conjunction with a browsing session performed by the client device via the clientless VPN. A native accessor function call is received at a client device. The modified accessor function call is executed at the client device, including by using the native accessor function call.

Methods for processing a workpiece with fluorine radicals are provided. In one example implementation, the method includes a workpiece having at least one silicon layer and at least one silicon germanium layer. The method can include placing the workpiece on a workpiece support in a processing chamber. The method can include generating one or more species from a process gas in a plasma chamber. The method can include filtering the one or more species to create a filtered mixture. The method can include exposing the workpiece to the filtered mixture to remove at least a portion of the at least one silicon layer.

Methods for processing a workpiece using fluorine radicals

Systems and methods for processing a workpiece are provided. In one example, a method includes exposing the workpiece to a first gas mixture when the workpiece is at a first temperature to conduct a doped silicate glass etch process. The first gas mixture can include hydrofluoric acid (HF) vapor. The doped silicate glass etch process at least partially removes the doped silicate glass layer at a first etch rate that is greater than a second etch rate associated with removal of the at least one second layer. The method can include heating the workpiece to a second temperature. The second temperature is greater than the first temperature. The method can include exposing the workpiece to a second gas mixture when the workpiece is at a second temperature to remove a residue from the workpiece.

Silicon oxide selective dry etch process

Methods, systems, and apparatus for generating hydrogen radicals for processing a workpiece, such as a semiconductor workpiece, are provided. In one example implementation, a method can include generating one or more species in a plasma chamber from an inert gas by inducing a plasma in the inert gas using a plasma source; mixing hydrogen gas with the one or more species to generate one or more hydrogen radicals; and exposing the workpiece in a processing chamber to the one or more hydrogen radicals.

Generation of hydrogen reactive species for processing of workpieces

Apparatus, systems, and methods for processing workpieces are provided. In one example implementation, a fluorine and oxygen plasma-based process can be used to smooth a roughened surface of a silicon and/or a silicon containing structure. The process can include generating species from a process gas using an inductive coupling element in a first chamber. The process can include introducing a fluorine containing gas and an oxygen containing gas with the species to create a mixture. The process can further include exposing the silicon and/or the silicon containing structure to the mixture such that the mixture at least partially etches a roughened portion to leave a smoother surface of the silicon and/or the silicon containing structure.

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San Jose, CA, United States of America

Qi Zhang