Alliance for Sustainable Energy, LLC

Comcast Cable Communications, LLC

Other

Midwest Research Institute

USA as Represented by Secretary of the Navy

Jiangnan University

U.S. Department of Energy

Thermal Components, Inc.

Qi Wang

Howard M Branz

Lichia Lu

Ningxiang Yuan

Pauls Stradins

Xiao Liu

Matthew Robert Page

Tihu Wang

William Michael Nemeth

Battogtokh Jugdersuren

Thomas H Metcalf

Yanfa Yan

Daniel R Queen

Eugene Iwaniczko

Harold R McHugh

Gang Wang

James D Gowan

Charles Teplin

James Scott Ward

Chao Deng

Luhong Tang

Bentian Zhang

Dan Lin

Jian Hu

Paul Stradins

Xiubao Huang

Methods and system are provided for determining a system capacity. The system capacity may be determined by performing one or more capacity tests. The one or more capacity tests may produce capacity test results.

Methods and systems for determining system capacity

Methods and system are provided for determining a maximum number of users of a system or network. A system capacity can be determined by performing a plurality of capacity tests. Each capacity test of the plurality of capacity tests can produce capacity test results that can be used to define a region of the system capacity from which the system capacity can be selected based on network conditions. The system capacity can be used to determine a user capacity of the system which can indicate the maximum number of users that can be active at any given time on the system. The system capacity can be used with a percentage weight of a plurality of user events performed on the system by active users to determine the maximum number of users.

Methods and systems for determining capacity

A liquid desalination, distillation, disinfection, purification, or concentration system by repeatedly re-using thermal energy is provided. Thermal heat source can be solar, fossil fuel, or low grade heat discharged from industrial systems. Multiple thermally insulated and isolated stages of vaporization-condensation chambers can be connected to enhance production yield. Vapor is generated by direct heating of liquid and flash evaporation. Vapor generated is condensed in condenser cooled by intake liquid. Counter circulating intake liquid will be heated by released latent heat from vapor. Externally provided thermal energy will accumulate and be re-used in the system. Vaporization and condensation process will be continuously re-cycled to enhance production yield. The system can be configured to support flexible deployment in various configurations and in different locations, including direct floating installation on water surface.

Counter circulating liquid processing system by repeatedly re-using thermal energy

A process for forming a doped nc-Si thin film thermoelectric material. A nc-Si thin film is slowly deposited on a substrate, either by hot-wire CVD (HWCVD) with a controlled H:SiHratio R=6-10 or by plasma-enhanced (PECVD) with a controlled R=80-100, followed by ion implantation of an n- or p-type dopant and a final annealing step to activate the implanted dopants and to remove amorphous regions. A doped nc-Si thin film thermoelectric material so formed has both a controllable grain size of from a few tens of nm to 3 nm and a controllable dopant distribution and thus can be configured to provide a thermoelectric material having predetermined desired thermal and/or electrical properties. A final annealing step is used to activate the dopants and remove any residual amorphous regions.

CVD nanocrystalline silicon thermoelectric material

CVD nanocrystalline silicon as thermoelectric material

An apparatus () for detecting slow or thermal neutrons (). The apparatus () includes an alpha particle-detecting layer () that is a hydrogenated amorphous silicon p-i-n diode structure. The apparatus includes a bottom metal contact () and a top metal contact () with the diode structure () positioned between the two contacts () to facilitate detection of alpha particles (). The apparatus () includes a neutron conversion layer () formed of a material containing boron-10 isotopes. The top contact () is pixilated with each contact pixel extending to or proximate to an edge of the apparatus to facilitate electrical contacting. The contact pixels have elongated bodies to allow them to extend across the apparatus surface () with each pixel having a small surface area to match capacitance based upon a current spike detecting circuit or amplifier connected to each pixel. The neutron conversion layer () may be deposited on the contact pixels () such as with use of inkjet printing of nanoparticle ink.

High sensitivity, solid state neutron detector

A system and a process for forming a semi-conductor device, and solar cells () formed thereby. The process includes preparing a substrate () for deposition of a junction layer (); forming the junction layer () on the substrate () using hot wire chemical vapor deposition; and, finishing the semi-conductor device.

Low temperature junction growth using hot-wire chemical vapor deposition

A method for hydrogenating poly-si. Poly-si is placed into the interior of a chamber. A filament is placed into the interior of a chamber. The base pressure of the interior of the chamber is evacuated, preferably to 10Torr or less. The poly-si is heated for a predetermined poly-si heating time. The filament is heated by providing an electrical power to the filament. Hydrogen is supplied into the pressurized interior of the chamber comprising the heated poly-si and the heated filament. Atomic hydrogen is produced by the filament at a rate whereby the atomic hydrogen surface density at the poly-si is less than the poly-si surface density. Preferably, the poly-si is covered from the atomic hydrogen produced by the heated filament for a first predetermined covering time. Preferably, the poly-si is then uncovered from the atomic hydrogen produced by the heated filament for a first hydrogenation time.

Method for the hydrogenation of poly-si

An apparatus () for detecting slow or thermal neutrons () including an alpha particle-detecting layer () that is a hydrogenated amorphous silicon p-i-n diode structure. The apparatus includes a bottom metal contact () and a top metal contact () with the diode structure () positioned between the two contacts () to facilitate detection of alpha particles (). The apparatus () includes a neutron conversion layer () formed of a material containing boron-10 isotopes. The top contact () is pixilated with each contact pixel extending to or proximate to an edge of the apparatus to facilitate electrical contacting. The contact pixels have elongated bodies to allow them to extend across the apparatus surface () with each pixel having a small surface area to match capacitance based upon a current spike detecting circuit or amplifier connected to each pixel. The neutron conversion layer () may be deposited on the contact pixels () such as with use of inkjet printing of nanoparticle ink.

A collagen peptide with immune-enhancing activity from, and a preparation method thereof are provided. The collagen peptide contains 80-90 wt % of proteins and 10-20 wt % of sugars, and has an average molecular weight of 1,000-3,000 Dalton. Monosaccharide contained in the collagen peptide are mainly glucose, glycine accounts for 16% or above and the sum of proline and hydroxyproline accounts for 18% or above of amino acids contained therein. The collagen peptide is capable of being used for preparation of medicines, health products, and skincare cosmetics having immune-enhancing function.

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A rapid thermal processing device and methods are provided for thermal processing of samples such as semiconductor wafers. The device has components including a stamp () having a stamping surface and a heater or cooler () to bring it to a selected processing temperature, a sample holder () for holding a sample () in position for intimate contact with the stamping surface; and positioning components () for moving the stamping surface and the stamp () in and away from intimate, substantially non-pressured contact. Methods for using and making such devices are also provided. These devices and methods allow inexpensive, efficient, easily controllable thermal processing.

Rapid thermal processing by stamping

A device () comprises a semiconductor diode () and a switchable element () positioned in stacked adjacent relationship. The semiconductor diode () and the switchable element () are electrically connected in series with one another. The switchable element () is switchable from a low-conductance state to a high-conductance state in response to the application of a low-density forming current and/or a low voltage.

Stacked switchable element and diode combination with a low breakdown switchable element

Growing community of inventors

Littleton, CO, United States of America

Qi Wang